# US 10,312,255 B2 · Semiconductor device and method for manufacturing same

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- Number: US 10,312,255 B2
- Document ID: US10312255B2
- Status: Granted
- Kind: B2
- Application number: 15/800,162
- Filed: 2017-11-01
- Published: 2018-02-22
- Granted: 2019-06-04
- Earliest claimed: 2015-10-06
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Yasuhito Yoshimizu; Satoshi Wakatsuki; Yohei Sato; Keiichi Sawa
- Web page: https://patentgrep.com/patent/US10312255B2

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10D 64/037: {comprising charge-trapping insulators}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/283: {by chemical means}
- H10W 10/021: {of air gaps}
- H10W 10/20: Air gaps
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a stacked body provided above the substrate, the stacked body including a plurality of electrode layers stacked with a first air gap interposed;
a semiconductor film extending in a stacking direction through the stacked body;
a plurality of charge storage films provided between the semiconductor film and the electrode layers, the plurality of charge storage films being separated in the stacking direction with a second air gap interposed; and
a plurality of insulating films provided on side surfaces of the electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing the first air gap, and on corners of the electrode layers between the portions and the side surfaces, the plurality of insulating films being divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed, the third air gap communicating with the first air gap and the second air gap between the first air gap and the second air gap.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the insulating films include corners provided along the corners of the electrode layers, and
the corners of the insulating films are adjacent to the second air gap.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein a length in the stacking direction of the second air gap is longer than a length in the stacking direction of the third air gap.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein a side surface of the semiconductor film opposing the charge storage films and a side surface of the semiconductor film opposing the second air gap are continuous along the stacking direction.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising an interconnect unit extending in the stacking direction and a first direction, and dividing the stacked body in a second direction, the first direction intersecting the stacking direction, the second direction intersecting the stacking direction and the first direction.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein the interconnect unit is electrically connected to the semiconductor film via the substrate.