# US 10,312,251 B2 · Semiconductor memory device and method for manufacturing same

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- Number: US 10,312,251 B2
- Document ID: US10312251B2
- Status: Granted
- Kind: B2
- Application number: 15/461,598
- Filed: 2017-03-17
- Published: 2018-08-09
- Granted: 2019-06-04
- Earliest claimed: 2017-02-07
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Takeshi Sonehara
- Web page: https://patentgrep.com/patent/US10312251B2

## CPC

- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/10: characterised by the top-view layout
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 43/10: characterised by the top-view layout
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor memory device according to an embodiment includes a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction, a semiconductor member extending in the first direction and piercing the stacked body, and a charge storage member provided between the semiconductor member and the electrode film. The electrode film includes a first portion. The first portion is composed of a metal silicide. The first portion surrounds the semiconductor member as viewed from the first direction.

## Claims

### Claim 1

A semiconductor memory device, comprising:
a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction;
a semiconductor member extending in the first direction and piercing the stacked body; and
a charge storage member provided between the semiconductor member and the electrode film,
the electrode film including a first portion and a second portion, the first portion surrounding the semiconductor member as viewed from the first direction and the second portion surrounding the first portion, the first portion being provided between the semiconductor member and the second portion, the second portion having a first material selected from silicon, germanium, or carbon, the second portion not having a metal silicide, the first portion having a metal silicide including the first material.

### Claim 2 (depends on 1)

The device according to claim 1, wherein the second portion contains an impurity to serve as a donor.

### Claim 3 (depends on 1)

The device according to claim 1, wherein the second portion contains an impurity to server as an acceptor.

### Claim 4 (depends on 1)

The device according to claim 1, wherein
a length in a second direction crossing the first direction of the electrode film is longer than a length in the first direction of the electrode film and a length in a third direction intersecting a plane including the first direction and the second direction of the electrode film, and
at least a part of the second portion is disposed in both end portions in the third direction of the electrode film.

### Claim 5 (depends on 1)

The device according to claim 1, wherein the first portion surrounds a plurality of the semiconductor members as viewed from the first direction.

### Claim 6 (depends on 1)

The device according to claim 1, wherein the metal silicide contains silicon and one or more metals selected from the group consisting of titanium, nickel, cobalt, tungsten, and platinum.

### Claim 7 (depends on 1)

The device according to claim 1, wherein in a cross section including a central axis of the semiconductor member, a concave portion is formed on a surface facing the semiconductor member of the first portion.

### Claim 8 (depends on 1)

The device according to claim 1, wherein the charge storage member has electrical conductivity, and is divided for each electrode film in the first direction.

### Claim 9 (depends on 1)

The device according to claim 1, wherein the charge storage member contains silicon.

### Claim 10 (depends on 1)

The device according to claim 1, further comprising:
a first insulating film provided between the first portion and the charge storage member, wherein
the first insulating film includes
a first layer containing silicon oxide,
a second layer containing silicon nitride, and
a third layer containing silicon oxide, and
the second layer is disposed between the first layer and the third layer.

### Claim 11 (depends on 1)

The device according to claim 1, further comprising:
a second insulating film containing silicon oxide, and provided between the charge storage member and the semiconductor member.

### Claim 12 (depends on 1)

The semiconductor memory device according to claim 1, wherein the first portion forms a path which extends along a second direction so that a resistance along the second direction of the electrode film is reduced, the path having a metal silicide.