# US 10,312,235 B2 · Method of forming fin shape structure having different buffer layers

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- Number: US 10,312,235 B2
- Document ID: US10312235B2
- Status: Granted
- Kind: B2
- Application number: 15/892,366
- Filed: 2018-02-08
- Published: 2018-06-14
- Granted: 2019-06-04
- Earliest claimed: 2014-11-13
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Wen-Yin Weng; Cheng-Tung Huang; Wei-Heng Hsu; Yu-Ming Lin; Ya-Ru Yang
- Web page: https://patentgrep.com/patent/US10312235B2

## CPC

- H10D 84/834: {comprising FinFETs}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 30/798: {being provided in or under the channel regions}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/08: using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
- H10D 84/8311: {the IGFETs characterised by having different channel structures}
- H10D 84/853: {comprising FinFETs}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3412: {including tin}
- H10P 14/3418: {Phosphides}
- H10P 14/3421: {Arsenides}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

## Claims

### Claim 1

A method of forming a fin shaped structure, comprising:
providing a substrate having a first fin structure and a second fin structure;
forming an insulation material layer on the substrate;
removing a portion of the first fin structure, to form a first recess in the insulation material layer, while the second fin structure remained covered by a first patterned mask layer;
forming a first buffer layer in the first recess;
forming a first channel layer in the first recess on the first buffer layer;
removing a portion of the second fin structure, to form a second recess in the insulation material layer, while the first fin structure remained covered by a second patterned mask layer;
forming a second buffer layer in the second recess, wherein while the first buffer layer comprises group III-V semiconductor material, the second buffer layer comprises group IV semiconductor material, and the first channel layer comprises a same material as that of the first buffer layer, and the first buffer layer and the second buffer layer are different in conductive type; and
forming a second channel layer in the second recess on the second buffer layer, wherein the second channel layer comprises a different material from that of the first channel layer.

### Claim 2 (depends on 1)

The method of forming the fin shaped structure according to claim 1, wherein, the first buffer layer has a greater band gap relative to the first channel layer, and the second buffer layer has a greater band gap relative to the second channel layer.

### Claim 3 (depends on 1)

The method of forming the fin shaped structure according to claim 1, wherein the first channel layer and the second channel layer are formed through a selective epitaxial process.

### Claim 4 (depends on 1)

The method of forming the fin shaped structure according to claim 1, wherein the first buffer layer and the second buffer layer are formed through a selective epitaxial process.

### Claim 5 (depends on 1)

The method of forming the fin shaped structure according to claim 1, further comprising:
removing a portion of the insulation material layer to form an insulation layer, wherein at least a portion of the first channel layer and at least a portion of the second channel layer are exposed from the insulation layer.