# US 10,312,234 B2 · Diode connected vertical transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,234 B2 - Document ID: US10312234B2 - Status: Granted - Kind: B2 - Application number: 15/907,908 - Filed: 2018-02-28 - Published: 2018-09-20 - Granted: 2019-06-04 - Earliest claimed: 2017-03-15 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Karthik Balakrishnan; Pouya Hashemi; Alexander Reznicek - Web page: https://patentgrep.com/patent/US10312234B2 ## CPC - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - G11C 7/062: {Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs} - H10D 8/045: {of PN junction diodes} - H10D 12/021: {of gated diodes, e.g. field-controlled diodes [FCD]} - H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)} - H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence) - H10D 84/0142: {the gate conductors having different shapes or dimensions} - H10D 84/016: {the components including vertical IGFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - G11C 11/4091: Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 12/211: {Gated diodes} - H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region. ## Claims ### Claim 1 An electrical device comprising: a semiconductor substrate including an electrically conductive surface region; and a diode connected transistor device comprising a vertically orientated channel present on the semiconductor substrate, the diode connected transistor device further including a first diode source/drain region provided by the electrically conductive surface region at a first end of the vertically orientated channel and a gate structure in electrical contact with the first diode source/drain region, wherein a gate electrode of the gate structure is in direct contact with the first diode source/drain region. ### Claim 2 (depends on 1) The electrical device of claim 1, wherein the diode connected transistor device comprises a second diode transistor source/drain region that is present at a second end of the diode vertically orientated channel that is opposing the first end that is in contact with the first diode source/drain region. ### Claim 3 (depends on 1) The electrical device of claim 1, wherein the diode vertically orientated channel are provided by a fin structure. ### Claim 4 (depends on 3) The electrical device of claim 3, wherein the fin structure is comprised of a type IV semiconductor. ### Claim 5 (depends on 3) The electrical device of claim 3, wherein the fin structure is comprised of a type III-V semiconductor. ### Claim 6 (depends on 1) The electrical device of claim 1, wherein the electrical device is a current mirror. ### Claim 7 (depends on 1) The electrical device of claim 1, wherein the electrical device is a comparator. ### Claim 8 (depends on 1) The electrical device of claim 1, wherein the electrical device is a sense amplifier. ### Claim 9 (depends on 3) The electrical device of claim 3, wherein the diode connected transistor device is a two terminal device. ### Claim 10 (depends on 9) The electrical device of claim 9, wherein the two terminal device comprises a first terminal provided by the electrically conductive surface region that provides the first diode source/drain region, and a second terminal in direct electrical contact to a second diode source/drain region. ### Claim 11 An electrical device comprising: a semiconductor substrate including an electrically conductive surface region; and a diode connected transistor device comprising a second vertically orientated channel present on the semiconductor substrate, the diode connected transistor device further including a first diode source/drain region provided by the electrically conductive surface region at a first end of the diode vertically orientated channel, a diode gate structure in electrical contact with the first diode source/drain region, and a second diode source/drain at a second end of the diode vertically orientated channel, wherein a gate electrode of the gate structure is in direct contact with the first diode source/drain region. ### Claim 12 (depends on 11) The electrical device of claim 11, wherein the diode vertically orientated channel are provided by a fin structure. ### Claim 13 (depends on 12) The electrical device of claim 12, wherein the fin structure is comprised of a type IV semiconductor. ### Claim 14 (depends on 12) The electrical device of claim 12, wherein the fin structure is comprised of a type III-V semiconductor. ### Claim 15 (depends on 11) The electrical device of claim 11, wherein the electrical device is a current mirror. ### Claim 16 (depends on 11) The electrical device of claim 11, wherein the electrical device is a comparator. ### Claim 17 (depends on 11) The electrical device of claim 11, wherein the electrical device is a sense amplifier. ### Claim 18 (depends on 11) The electrical device of claim 11, wherein the diode connected transistor device is a two terminal device. ### Claim 19 (depends on 18) The electrical device of claim 18, wherein the two terminal device comprises a first terminal provided by the electrically conductive surface region that provides the first diode source/drain region, and a second terminal in direct electrical contact to a second diode source/drain region. ### Claim 20 (depends on 11) The electrical device of claim 11, further comprising a vertically orientated transistor including a channel region comprised of a channel fin structure.