# US 10,312,208 B2 · Copper pillar bump structure and manufacturing method therefor

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- Number: US 10,312,208 B2
- Document ID: US10312208B2
- Status: Granted
- Kind: B2
- Application number: 15/891,745
- Filed: 2018-02-08
- Published: 2018-09-06
- Granted: 2019-06-04
- Earliest claimed: 2017-03-02
- Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Inventors: Xingtao Xue; Chih Ching Ho
- Web page: https://patentgrep.com/patent/US10312208B2

## CPC

- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/90: Bond pads, in general
- H10W 72/01212: {at a different location than on the final device, e.g. forming solder preforms}
- H10W 72/01223: {in liquid form, e.g. by dispensing droplets or by screen printing}
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/01257: {by reflowing}
- H10W 72/019: {of bond pads}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01953: {by etching}
- H10W 72/221: {Structures or relative sizes}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/234: {Cross-sectional shape, i.e. in side view}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/255: {of outermost layers of multilayered bumps, e.g. material of a coating}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.

## Claims

### Claim 1

A method for manufacturing a metal bump device, the method comprising:
providing a substrate structure including a substrate and a metal layer having a recess on the substrate;
forming a metal bump on the recess of the metal layer using a ball placement process; and
forming a solder paste on the metal bump using a printing process,
wherein the metal layer comprises a first metal layer on the substrate, a second metal layer on the first metal layer, and a third metal layer on the second metal layer, the third metal layer having a thickness greater than a thickness of the second metal layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising performing a reflow process on the solder paste.

### Claim 3 (depends on 1)

The method of claim 1, wherein the ball placement process comprising:
forming a stencil having a first opening aligned with the recess on the metal layer;
forming a flux in the recess through the first opening;
bonding the metal bump to the recess through the first opening using the flux; and
removing the stencil.

### Claim 4 (depends on 3)

The method of claim 3, wherein the first opening has a size that is in a range between 70% and 90% of a size of the recess.

### Claim 5 (depends on 1)

The method of claim 1, wherein the printing process comprises:
forming a printing screen having a second opening aligned with the metal bump on the metal bump;
forming the solder paste on the metal bump through the second opening; and
removing the printing screen.

### Claim 6 (depends on 1)

The method of claim 1, wherein:
the metal bump comprises copper;
the solder paste comprises tin or tin-silver.

### Claim 7 (depends on 1)

The method of claim 1, wherein the metal bump has a diameter in a range between 60 μm and 100 μm, and a length in a range between 60 μm and 150 μm.

### Claim 8 (depends on 1)

The method of claim 1, wherein providing the substrate structure comprises:
providing the substrate;
forming a liner layer on the substrate;
forming an insulator layer on the liner layer leaving a surface portion of the liner layer uncovered;
forming a passivation layer on the insulator layer, the passivation layer having an opening exposing an uncovered surface portion of the liner layer and a protrusion at a peripheral edge of the opening, the protrusion and an exposed second portion of the liner layer forming a trench, and
forming the metal layer on the passivation layer and on the liner layer, the metal layer having a first portion disposed in the trench and a second portion disposed outside the trench.

### Claim 9 (depends on 8)

The method of claim 8, further comprising:
removing the first portion of the metal layer disposed outside the trench.

### Claim 10 (depends on 1)

The method of claim 1, wherein the metal bump is formed on the third metal layer.

### Claim 11

A metal bump device, comprising:
a substrate;
a metal layer having a recess on the substrate;
a metal bump on the recess of the metal layer; and
a solder paste on the metal bump,
wherein the metal layer comprises a first metal layer on the substrate, a second metal layer on the first metal layer, and a third metal layer on the second metal layer, the third metal layer having a thickness greater than a thickness of the second metal layer.

### Claim 12 (depends on 11)

The metal bump device of claim 11, further comprising:
a flux configured to bond the metal bump with the metal layer.

### Claim 13 (depends on 11)

The metal bump device of claim 11, wherein:
the metal bump comprises copper;
the solder paste comprises tin or tin-silver.

### Claim 14 (depends on 11)

The metal bump device of claim 11, wherein the metal bump has a diameter or width smaller than a width of the recess.

### Claim 15 (depends on 11)

The metal bump device of claim 11, wherein the metal bump has a diameter in a range between 60 μm and 100 μm and a length in a range between 60 μm and 150 μm.

### Claim 16 (depends on 11)

The metal bump device of claim 11, further comprising:
a liner layer on the substrate;
an insulator layer on the liner layer and leaving a surface portion of the liner layer uncovered;
a passivation layer on the insulator layer, the passivation layer having an opening exposing an uncovered surface portion of the liner layer and a protrusion on a peripheral edge of the opening, the protrusion and an exposed surface portion of the liner layer forming a trench,
wherein the recess of the metal layer is on the trench.

### Claim 17 (depends on 11)

The metal bump device of claim 11, wherein the metal layer comprises a first metal layer on the substrate and a second metal layer on the first metal layer, the metal bump is formed on the second metal layer.

### Claim 18 (depends on 11)

The metal bump device of claim 11, wherein the thickness of the second metal layer is less than 1 micron, and the thickness of the third metal layer is greater than 1 micron.

### Claim 19 (depends on 11)

The metal bump device of claim 11, wherein the metal bump is a copper pillar bump forming on the third metal layer.

### Claim 20 (depends on 11)

The metal bump device of claim 11, wherein the first metal layer comprises titanium, the second metal layer comprises copper, and the third metal layer comprises copper.