# US 10,312,190 B2 · Structure of integrated inductor

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- Number: US 10,312,190 B2
- Document ID: US10312190B2
- Status: Granted
- Kind: B2
- Application number: 14/727,139
- Filed: 2015-06-01
- Published: 2016-02-04
- Granted: 2019-06-04
- Earliest claimed: 2014-07-30
- Assignees: Realtek Semiconductor Corp.
- Applicants: Realtek Semiconductor Corporation
- Inventors: Kai-Yi Huang; Hsiao-Tsung Yen
- Web page: https://patentgrep.com/patent/US10312190B2

## CPC

- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H01F 17/0006: {Printed inductances (printed coils for dynamo-electric machines H02K3/26; printed circuits H05K)}
- H01F 17/0013: {with stacked layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

This invention discloses an integrated inductor structure, including a first metal trace, a second metal trace, and a connecting metal trace. Tow terminals of the connecting metal trace are respectively connected to the first metal trace and the second metal trace through at least a connecting structure. The connected first metal trace, the connecting metal trace and the second metal trace together form an inductor structure. The connecting structure is connected to a connecting area of the first metal trace. The connecting area of the first metal trace has a first width. A smallest width of the first metal trace is a second width. The second width is smaller than the first width.

## Claims

### Claim 1

An integrated inductor structure, comprising:
a first metal trace, having two ends respectively formed with a first connecting area and a second connecting area, wherein the first connecting area and the second connecting area respectively encompass at least one connecting structure;
a second metal trace; and
a connecting metal trace, connected directly with the first connecting area or the second connecting area and connecting the first metal trace and the second metal trace;
wherein the first metal trace, the connecting metal trace, and the second metal trace are connected to form an inductor structure, the first connecting area of the first metal trace has a first width, a smallest width of the first metal trace is a second width, and the second width is smaller than the first width;
wherein the first metal trace further has a third width which is greater than the second width and smaller than the first width.

### Claim 2 (depends on 1)

The integrated inductor structure of claim 1, wherein the connecting structure connects a connecting area of the connecting metal trace, the connecting area of the connecting metal trace has the first width, a minimum width of the connecting metal trace, except for the connecting area, is a third width, and the third width is larger than the first width.

### Claim 3 (depends on 1)

The integrated inductor structure of claim 1, wherein the connecting structure connects a connecting area of the second metal trace, the connecting area of the second metal trace has the first width, a smallest width of the second metal trace is a fourth width, and the fourth width is smaller than the first width.

### Claim 4 (depends on 3)

The integrated inductor structure of claim 3, wherein the second width is equal to the fourth width.

### Claim 5 (depends on 4)

The integrated inductor structure of claim 4, wherein the connecting structure connects a connecting area of the connecting metal trace, the connecting area of the connecting metal trace has the first width, a minimum width of the connecting metal trace, except for the connecting area, is a third width, and the third width is larger than the first width.

### Claim 6 (depends on 1)

The integrated inductor structure of claim 1, wherein the first metal trace comprises a first segment and a second segment, a width of the first segment is the second width, the second segment is an extension of the first segment and comprises the first connecting area or the second connecting area, and a width of the second segment is larger than the second width.

### Claim 7 (depends on 1)

The integrated inductor structure of claim 1, wherein the first metal trace and the second metal trace are arranged at the same layer in the structure, the connecting metal trace is arranged at a layer different from the layer of the first metal trace and the second metal trace, and the connecting structure is either a via that penetrates a dielectric layer or a TSV that penetrates silicon.

### Claim 8 (depends on 1)

The integrated inductor structure of claim 1, wherein the connecting metal trace connects the first metal trace or the second metal trace through a plurality of connecting structures.

### Claim 9 (depends on 1)

The integrated inductor structure of claim 1 being a structure of a symmetric spiral inductor.