# US 10,312,181 B2 · Advanced through substrate via metallization in three dimensional semiconductor integration

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- Number: US 10,312,181 B2
- Document ID: US10312181B2
- Status: Granted
- Kind: B2
- Application number: 15/167,584
- Filed: 2016-05-27
- Published: 2017-11-30
- Granted: 2019-06-04
- Earliest claimed: 2016-05-27
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Daniel C Edelstein; Chih-Chao Yang
- Web page: https://patentgrep.com/patent/US10312181B2

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10P 14/44: Physical vapour deposition [PVD]
- H10P 14/47: Electrolytic deposition, i.e. electroplating; Electroless plating
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/0261: {characterised by the filling method or the material of the conductive fill}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/043: {for electroplating}
- H10W 20/048: {by using plasmas or gaseous environments, e.g. by nitriding}
- H10W 20/059: {by reflowing or applying pressure}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill a portion of the through substrate via and cover the horizontal field area. A thermal anneal step to reflow a portion of the first metal layer on the horizontal field area into the through substrate via. A second metal layer is deposited over the first metal layer to fill a remaining portion of the through substrate via. Another aspect of the invention is a device created by the method.

## Claims

### Claim 1

A method for fabricating a through substrate via structure comprising:
providing a through substrate via in a substrate, the through substrate via having an aspect ratio greater than 10:1, vertical sidewalls and a horizontal bottom in an intermediate state, the substrate having a horizontal field area surrounding the through substrate via, the substrate being comprised of a semiconductor in which devices for an integrated circuit are embedded;
depositing a metallic barrier layer on the sidewalls of the through substrate via;
performing a nitridation process to convert a surface portion of the metallic barrier layer to a nitride surface layer;
depositing a wetting enhancement liner layer on the nitride surface layer, wherein the nitride surface layer enhances the nucleation of the wetting enhancement layer;
depositing a first metal layer to fill a portion of the through substrate via and cover the horizontal field area, wherein the deposition of the first metal layer includes a copper seed layer by a physical vapor deposition (PVD) process;
performing a thermal anneal step to reflow a portion of the first metal layer on the horizontal field area into the through substrate via, including the copper seed layer which is reflowed so that the copper seed layer deposited by the PVD process fills a lower portion of the through substrate via;
depositing a second seed layer by a PVD process on the reflowed copper seed layer; and
depositing a second metal layer over the first metal layer to fill a remaining portion of the through substrate via, wherein the second metal layer is deposited on the second seed layer and the second seed layer substantially maintains a deposited form after depositing the second metal layer;
wherein the through substrate via is a via which passes through the entire substrate in a finished state.

### Claim 2 (depends on 1)

The method as recited in claim 1, wherein the first metal layer is copper.

### Claim 3 (depends on 1)

The method as recited in claim 1, wherein the second metal layer is selected from the group consisting of Al, W, Co and Ru.

### Claim 4 (depends on 1)

The method as recited in claim 1, wherein the wetting enhancement liner layer is selected from the group consisting of W, Co, and Rh.

### Claim 5 (depends on 1)

The method as recited in claim 1, wherein the nitridation process is selected from the group of a plasma nitridation process and a thermal nitridation process.

### Claim 6 (depends on 3)

The method as recited in claim 3, further comprising a planarization step to remove excess metal of the first metal layer, the second metal layer and the seed metal layer from the horizontal field area.

### Claim 7 (depends on 1)

The method as recited in claim 1, wherein the through substrate via is a through silicon via, and a plurality of through silicon via structures are produced, wherein a first subset of the through silicon via structures electrically connect to contacts of a first integrated circuit layer and a second subset of the through silicon via structures electrically connect to contacts of a second integrated circuit layer.

### Claim 8 (depends on 1)

The method as recited in claim 1, wherein the first metal layer is comprised of a first metal and the second metal layer is comprised of a second metal.

### Claim 9 (depends on 1)

The method as recited in claim 1, wherein the substrate comprises a silicon chip.

### Claim 10 (depends on 1)

The method as recited in claim 1, wherein the metallic barrier layer is selected from the group consisting of Co, Ru, CoN, and RuN.

### Claim 11 (depends on 8)

The method as recited in claim 8, wherein the metallic barrier layer is CoN and the wetting enhancement layer is Rh.