# US 10,312,166 B2 · Inspection system and inspection method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,166 B2 - Document ID: US10312166B2 - Status: Granted - Kind: B2 - Application number: 15/547,858 - Filed: 2016-01-08 - Published: 2018-02-01 - Granted: 2019-06-04 - Earliest claimed: 2015-02-10 - Assignees: Hamamatsu Photonics K.K. - Applicants: Hamamatsu Photonics K.K. - Inventors: Shinsuke Suzuki; Hirotoshi Terada; Shunsuke Matsuda - Web page: https://patentgrep.com/patent/US10312166B2 ## CPC - H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement} - B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)} - B23K 26/032: {using optical means} - B23K 26/355: {Texturing} - B23K 26/359: by providing a line or line pattern, e.g. a dotted break initiation line - B23K 26/361: for deburring or mechanical trimming (B23K26/351 takes precedence) - B23K 26/362: Laser etching - B23K 26/364: for making a groove or trench, e.g. for scribing a break initiation groove - B23K 26/402: involving non-metallic material, e.g. isolators - B23K 26/702: {Auxiliary equipment} - G06T 7/0008: {checking presence/absence} - H10P 72/0614: {Marking devices} - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - B23K 2101/42: Printed circuits - B23K 2103/10: Aluminium or alloys thereof - B23K 2103/166: {Multilayered materials} - G02B 5/208: {for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation} - G06T 2207/10048: Infrared image - G06T 2207/10152: Varying illumination - G06T 2207/30148: Semiconductor; IC; Wafer - G06T 2207/30204: Marker - H10W 46/301: {for alignment} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - G06T: IMAGE DATA PROCESSING OR GENERATION, IN GENERAL - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract An inspection system includes a laser light source, an optical system for laser marking that irradiates a semiconductor device with laser light from a metal layer side, a control unit that controls the laser light source to control laser marking, a two-dimensional camera that detects light from the semiconductor device on a substrate side and outputs an optical reflection image, and an analysis unit that generates a pattern image of the semiconductor device, and the control unit controls the laser light source so that laser marking is performed until a mark image appears in a pattern image. ## Claims ### Claim 1 An inspection system for performing laser marking on a semiconductor device having a metal layer formed on a substrate, the inspection system comprising: a first light source configured to output laser light; an optical system for laser marking configured to irradiate the semiconductor device with the laser light from the metal layer side; a marking controller configured to control the first light source to control the laser marking; an observation optical system configured to be arranged on the substrate side of the semiconductor device and to transmit light from the semiconductor device; a photodetector configured to detect the light from the semiconductor device through the observation optical system and to output a detection signal; and an image processor configured to generate a pattern image based on the detection signal, wherein the marking controller is configured to control the irradiation of the laser light so that the laser marking is performed until a mark image formed by the laser marking appears in the pattern image. ### Claim 2 (depends on 1) The inspection system according to claim 1, wherein the marking controller is configured to control the irradiation of the laser light so that the laser marking is performed until the laser light penetrates through the metal layer. ### Claim 3 (depends on 1) The inspection system according to claim 1, wherein the image processor is configured to generate the pattern image while the laser marking is being performed by the laser light. ### Claim 4 (depends on 1) The inspection system according to claim 1, further comprising: a second light source configured to output illumination light, wherein the photodetector is a two-dimensional camera configured to image the illumination light reflected in the semiconductor device. ### Claim 5 (depends on 1) The inspection system according to claim 1, wherein the photodetector is an infrared camera configured to image heat rays from the semiconductor device. ### Claim 6 (depends on 1) The inspection system according to claim 1, further comprising: a second light source configured to output light, wherein the observation optical system comprises an optical scanner configured to scan the semiconductor device with the light output from the second light source and to transmit light reflected from the semiconductor device to the photodetector. ### Claim 7 (depends on 1) The inspection system according to claim 1, wherein the first light source is configured to output the laser light having a wavelength equal to or longer than 1000 nm, and the observation optical system comprises an optical filter configured to block light including the wavelength of the laser light. ### Claim 8 (depends on 1) The inspection system according to claim 1, wherein the first light source is configured to output the laser light having a wavelength shorter than 1000 nanometers. ### Claim 9 An inspection method of performing laser marking on a semiconductor device in which a metal layer is formed on a substrate, the inspection method comprising: performing laser marking by irradiating the semiconductor device with laser light from the metal layer side; transmitting light from the semiconductor device to a photodetector by using an observation optical system arranged on the substrate side of the semiconductor device; and generating a pattern image based on the light from the semiconductor device, wherein performing the laser marking comprises performing the irradiation of the laser light until a mark image formed by the laser marking appears in the pattern image. ### Claim 10 (depends on 9) The inspection method according to claim 9, wherein performing the laser marking comprises performing the laser marking until the laser light penetrates the metal layer. ### Claim 11 (depends on 9) The inspection method according to claim 9, wherein generating the pattern image comprises generating the pattern image while the laser marking is being performed. ### Claim 12 (depends on 9) The inspection method according to claim 9, wherein the laser light has a wavelength equal to or longer than 1000 nm, and the observation optical system comprises an optical filter blocking light having the wavelength of the laser light. ### Claim 13 (depends on 9) The inspection method according to claim 9, wherein the laser light has a wavelength shorter than 1000 nanometers.