# US 10,312,125 B2 · Protective tape and method for manufacturing semiconductor device using the same

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- Number: US 10,312,125 B2
- Document ID: US10312125B2
- Status: Granted
- Kind: B2
- Application number: 15/574,729
- Filed: 2016-06-03
- Published: 2018-05-31
- Granted: 2019-06-04
- Earliest claimed: 2015-06-04
- Assignees: Dexerials Corporation
- Applicants: Dexerials Corporation
- Inventors: Hironobu Moriyama; Hidekazu Yagi; Tomoyuki Ishimatsu; Katsuyuki Ebisawa; Keiji Honjyo; Junichi Kaneko
- Web page: https://patentgrep.com/patent/US10312125B2

## CPC

- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- B32B 3/08: characterised by added members at particular parts {(layer formed of separate pieces of material which are juxtaposed side-by-side B32B3/14, B32B3/18)}
- B32B 7/04: Interconnection of layers
- B32B 7/09: by stitching, needling or sewing (by {mechanically connecting} fibrous layers {to another layer} B32B5/06)
- B32B 7/12: using interposed adhesives or interposed materials with bonding properties
- B32B 9/005: {comprising one layer of ceramic material, e.g. porcelain, ceramic tile (layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)}
- B32B 9/04: comprising such {particular} substance as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)}
- B32B 27/00: Layered products comprising {a layer of} synthetic resin {(fibrous or filamentary layer made of a synthetic resin B32B5/02; particulate layer made of a synthetic resin B32B5/16; foamed layer made of a synthetic resin B32B5/18)}
- B32B 27/06: as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)}
- B32B 27/08: of synthetic resin
- B32B 27/281: {comprising polyimides}
- B32B 27/38: comprising epoxy resins
- B32B 38/10: Removing layers, or parts of layers, mechanically or chemically
- C09J 7/245: {Vinyl resins, e.g. polyvinyl chloride [PVC]}
- C09J 7/255: {Polyesters}
- C09J 7/29: Laminated material (metallised plastics C09J7/22)
- C09J 7/38: Pressure-sensitive adhesives [PSA]
- C09J 163/04: Epoxynovolacs
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 72/7404: {the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- B32B 2307/51: Elastic
- B32B 2307/732: Dimensional properties
- B32B 2405/00: Adhesive articles, e.g. adhesive tapes
- B32B 2457/14: Semiconductor wafers
- C09J 163/00: Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
- C09J 2203/326: for bonding electronic components such as wafers, chips or semiconductors
- C09J 2301/162: the carrier being a laminate constituted by plastic layers only
- C09J 2301/414: presence of a copolymer
- C09J 2423/046: in the substrate
- C09J 2431/006: in the substrate
- C09J 2463/00: Presence of epoxy resin
- C09J 2467/006: in the substrate
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/742: {involving stretching of the auxiliary support post dicing}
- H10P 72/7422: {used to protect an active side of a device or wafer}
- H10P 72/7438: {with parts of the auxiliary support remaining in the finished device}
- H10P 72/7442: {Separation by peeling}
- H10W 72/01204: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates}
- H10W 72/072: {of bump connectors}
- H10W 72/073: {of die-attach connectors}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A protective tape that improves solder bonding properties and reduces wafer warping. The protective tape includes, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer. The protective tape satisfies the conditions expressed by the following formulae (1) to (3): Ga>Gb (1) Ta<Tb (2) (Ga*Ta+Gb*Tb)/(Ta+Tb)≤1.4E+06 Pa. (3) Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted; Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted; Ta represents a thickness of the first thermoplastic resin layer; and Tb represents a thickness of the second thermoplastic resin layer.

## Claims

### Claim 1

A protective tape comprising, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer, wherein conditions expressed by the following formulae (1) to (3) are satisfied,
Ga>Gb (1)
Ta<Tb (2)
(Ga*Ta+Gb*Tb)/(Ta+Tb)≤1.4E+06 Pa (3)
wherein, in formula (1), Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted and Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted, in formula (2), Ta represents a thickness of the first thermoplastic resin layer and Tb represents a thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb are the same as in formula (1) and Ta and Tb are the same as in formula (2).

### Claim 2 (depends on 1)

The protective tape according to claim 1, wherein a condition expressed by the following formula (4) is satisfied,
Gn/Ga≤0.01 (4)
wherein, in formula (4), Gn represents a shear storage modulus of the adhesive agent layer at the pasting temperature at which the protective tape is pasted and Ga is the same as in formula (1).

### Claim 3 (depends on 1)

The protective tape according to claim 1, wherein the pasting temperature is 40 to 80° C.

### Claim 4 (depends on 1)

The protective tape according to claim 1, wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

### Claim 5 (depends on 1)

The protective tape according to claim 1,
wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

### Claim 6 (depends on 1)

The protective tape according to claim 1, wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

### Claim 7 (depends on 6)

The protective tape according to claim 6, wherein the thickness of the adhesive agent layer is 10 to 80% of the height of the bump.

### Claim 8

A method for manufacturing a semiconductor device comprising:
a protective tape pasting step of pasting a protective tape having an adhesive agent layer to a wafer surface on which a bump is formed;
a grinding step of grinding a surface of the wafer opposite to the side on which the protective tape is pasted; and
a protective tape peeling step of peeling the protective tape so that the adhesive agent layer remains and other layers are removed,
wherein the protective tape comprises, in the following order, the adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer, wherein conditions expressed by the following formulae (1) to (3) are satisfied,
Ga>Gb (1)
Ta<Tb (2)
(Ga*Ta+Gb*Tb)/(Ta+Tb)≤1.4E+06 Pa (3)
wherein, in formula (1), Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted and Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted, in formula (2), Ta represents a thickness of the first thermoplastic resin layer and Tb represents a thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb are the same as in formula (1) and Ta and Tb are the same as in formula (2).

### Claim 9 (depends on 8)

The method for manufacturing a semiconductor device according to claim 8, further comprising:
an adhesive tape pasting step of pasting an adhesive tape to a ground surface;
a dicing step of dicing the wafer to which the adhesive tape is pasted to obtain individual semiconductor chips; and
a curing step of curing the adhesive agent layer,
wherein the curing step is performed before the dicing step.

### Claim 10 (depends on 8)

A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 8.

### Claim 11 (depends on 2)

The protective tape according to claim 2, wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

### Claim 12 (depends on 3)

The protective tape according to claim 3, wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

### Claim 13 (depends on 2)

The protective tape according to claim 2, wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

### Claim 14 (depends on 3)

The protective tape according to claim 3, wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

### Claim 15 (depends on 4)

The protective tape according to claim 4, wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

### Claim 16 (depends on 2)

The protective tape according to claim 2, wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

### Claim 17 (depends on 3)

The protective tape according to claim 3, wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

### Claim 18 (depends on 4)

The protective tape according to claim 4, wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

### Claim 19 (depends on 5)

The protective tape according to claim 5, wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

### Claim 20 (depends on 9)

A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 9.