# US 10,312,119 B2 · Line charge volume with integrated pressure measurement

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- Number: US 10,312,119 B2
- Document ID: US10312119B2
- Status: Granted
- Kind: B2
- Application number: 15/046,214
- Filed: 2016-02-17
- Published: 2017-08-17
- Granted: 2019-06-04
- Earliest claimed: 2016-02-17
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Karl Leeser
- Web page: https://patentgrep.com/patent/US10312119B2

## CPC

- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- G01F 1/00: Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow (measuring a proportion of the volume flow G01F5/00)
- G05D 7/0647: {the plurality of throttling means being arranged in series}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01F: MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G05D: SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES

## Abstract

A line charge volume and methods for use in delivery of gas to a reactor for processing semiconductor wafers is provided. The line charge volume includes a chamber that extends between a first end and a second end, and the first end includes an inlet port and an outlet port. A pressure sensor is integrated with the chamber. The pressure sensor has a measurement side for measuring a deflection of a diaphragm. The diaphragm is directly exposed to an interior of the chamber so that pressure produced by a gas that is provided into the chamber via the inlet port produces a force upon the diaphragm. The measurement side includes electronics for measuring a capacitance value corresponding to the deflection of the diaphragm. The deflection is correlated to a pressure difference, and the pressure difference is equivalent to a pressure volume (Pv) of the chamber.

## Claims

### Claim 1

A line charge volume for use in delivery of gas to a reactor used for processing semiconductor wafers, comprising,
a chamber that extends between a first end and a second end, the first end includes an inlet port and an outlet port; and
a pressure sensor integrated with the chamber at the second end, the pressure sensor having a measurement side for measuring a deflection of a diaphragm, the diaphragm being directly exposed to an interior of the chamber so that pressure produced by a gas that is flown into the chamber via the inlet port produces a force upon the diaphragm, the gas being held in the chamber with an outlet valve, the measurement side including electronics for measuring a capacitance value corresponding to the deflection of the diaphragm, the deflection being correlated to a pressure difference, the pressure difference being equivalent to a pressure of volume (Pv) of said gas held in the chamber;
wherein an inlet valve is interfaced between a controller and the inlet port and said outlet valve is interfaced between the outlet port and the reactor,
the controller is configured to close said inlet valve upon reaching a desired level in the pressure of volume (Pv) of said gas held in the chamber and cause opening of said outlet valve to provide a burst of said gas held in the chamber to said reactor.

### Claim 2 (depends on 1)

The line charge volume of claim 1, wherein pressure of volume (Pv) of said gas held in the chamber determines an amount of said gas for the burst of said gas as defined by a process recipe.

### Claim 3 (depends on 1)

The line charge volume of claim 1, wherein the pressure sensor being integrated with the chamber includes a weld that joins an outer surface of the chamber with an outer surface of the pressure sensor to define an airtight seal.

### Claim 4 (depends on 1)

The line charge volume of claim 1, wherein the diaphragm is at least partially defined from a metallic material and the measurement side includes one or more electrodes, the one or more electrodes are connected to the electronics for measuring the capacitance value corresponding to the deflection of the diaphragm, wherein the capacitance value changes as the diaphragm is caused to deflect toward the measurement side or away from the measurement side.

### Claim 5 (depends on 4)

The line charge volume of claim 4, wherein the pressure sensor further includes an isolation interface, the isolation interface disposed between the electrodes and electronics and the diaphragm.

### Claim 6 (depends on 5)

The line charge volume of claim 5, wherein a space is defined between the isolation interface and the diaphragm, the space is sealed with a predefined reduced pressure.

### Claim 7 (depends on 1)

The line charge volume of claim 1, wherein the chamber has,
a line diameter (d) along an elongated side that extends between the first end and the second end; and
a line length (l) that separates the inlet port and the outlet port at the first end, wherein a ratio of line length (l) divided by line diameter (d) is about 0.1 or less.

### Claim 8 (depends on 5)

The line charge volume of claim 5, wherein the isolation interface is defined from a dielectric material to enable measurement of the capacitance between the electrodes and the diaphragm.

### Claim 9 (depends on 1)

The line charge volume of claim 1, wherein the controller is interfaced with one or more other pressure sensors for providing one or more other process gases to the reactor, and each respective pressure sensor includes a respective chamber that is used to measure a respective pressure of volume of the respective chamber.

### Claim 10 (depends on 1)

The line charge volume of claim 1, wherein controller executes a charge volume control module for receiving pressure data from pressure sensor and a process gas delivery control module for controlling the inlet valve and the outlet valve.

### Claim 11 (depends on 1)

The line charge volume of claim 1, further comprising,
a plurality of gas lines coupled between a respective plurality of process gas sources, each of the plurality of gas lines including one of said line charge volume, such that input valves and output values are disposed on either side of said line charge volumes, the output valves of each of the plurality of gas lines being connected to a showerhead of the reactor;
the controller for enabling delivery of bursts of gas from the plurality of gas lines to the showerhead of the reactor in accordance with a defined processing recipe, wherein each burst of gas is measured using the integrated pressure sensor of the respective line charge volumes.

### Claim 12 (depends on 1)

The line charge volume of claim 1, wherein the chamber is defined in part by a cylindrical stainless steel body and the pressure sensor has a respective cylindrical stainless steel outer body that mates with the second end of the chamber.

### Claim 13 (depends on 1)

The line charge volume of claim 1, wherein the controller is part of a mass flow controller (MFC) or a pressure controller.

### Claim 14

A method for operating a line charge volume for delivery of a gas to a reactor used for processing a semiconductor substrate, comprising,
providing a chamber with an pressure sensor, the chamber having a first end that includes an inlet port and an outlet port and a second end that is interface with the pressure sensor;
closing an outlet valve that is coupled to the outlet port and opening an inlet valve that is coupled to the inlet port;
flowing the gas from a gas source through the inlet valve that leads into the inlet port of the chamber to cause an increase in pressure in the chamber;
sensing a capacitance value using the pressure sensor, the capacitance value being indicative of deflection of a diaphragm of the pressure sensor as the gas flows into the chamber as said gas continues to fill the chamber;
detecting that an amount of deflection has occurred to the diaphragm that corresponds to a target pressure of volume (Pv) of said gas held in the chamber; and
closing the inlet valve and opening the outlet valve upon reaching the target pressure of volume (Pv) of said gas held in the chamber so as to cause a burst delivery of the gas from the chamber to the reactor.

### Claim 15 (depends on 14)

The method of claim 14, wherein the amount of deflection is in a direction that is toward the pressure sensor and away from the first end of the chamber.

### Claim 16 (depends on 14)

The method of claim 14, wherein sensing the capacitance value occurs while the gas is flowing to fill the chamber, the capacitance value is configured to change as the diaphragm experiences the deflection, the deflection being correlated to a pressure difference (ΔP) that is substantially equivalent to the pressure of volume (Pv) of the gas held in the chamber, as a reference pressure (Pref) of the pressure sensor is pumped down to a nano-Torr level.

### Claim 17 (depends on 14)

The method of claim 14, wherein a reference pressure (Pref) is disposed in a space of the pressure sensor opposite the diaphragm, the reference pressure being set by pumping down the space.

### Claim 18 (depends on 17)

The method of claim 17, wherein the reference pressure (Pref) is selected to be lower than a lowest pressure to be measured by the pressure sensor.

### Claim 19 (depends on 14)

The method of claim 14, wherein the line charge volume does not include an additional pressure sensor along a gas line to which chamber is connected.

### Claim 20 (depends on 14)

The method of claim 14, wherein the target pressure of volume (Pv) of said gas held in the chamber is correlated to an amount of said gas to be provided by said burst delivery of the gas from the chamber to the reactor.