# US 10,312,109 B2 · Lithographic technique incorporating varied pattern materials

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- Number: US 10,312,109 B2
- Document ID: US10312109B2
- Status: Granted
- Kind: B2
- Application number: 15/996,099
- Filed: 2018-06-01
- Published: 2018-10-04
- Granted: 2019-06-04
- Earliest claimed: 2015-04-17
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Chin-Yuan Tseng; Chi-Cheng Hung; Chun-Kuang Chen; De-Fang Chen; Ru-Gun Liu; Tsai-Sheng Gau; Wei-Liang Lin
- Web page: https://patentgrep.com/patent/US10312109B2

## CPC

- H10P 50/73: {using masks for insulating materials}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Patterning techniques are disclosed that can relax overlay requirements and/or increase integrated circuit design flexibility. An exemplary method includes forming a first set of fins and a second set of fins having different etch sensitivities on a material layer. The fins of the second set of fins are interspersed between the fins of the first set of fins. A first patterning process removes a subset of the first set of fins and a portion of the material layer underlying the subset of the first set of fins. The first patterning process avoids substantial removal of an exposed portion of the second set of fins. A second patterning process removes a subset of the second set of fins and a portion of the material layer underlying the subset of the second set of fins. The second patterning process avoids substantial removal of an exposed portion of the first set of fins.

## Claims

### Claim 1

A method comprising:
forming a first set of fins and a second set of fins on a material layer of a workpiece, wherein fins of the second set of fins are interspersed between fins of the first set of fins, and wherein the first set of fins have a different etchant sensitivity from the second set of fins;
performing a first patterning process that removes a subset of the first set of fins and a first portion of the material layer underlying the subset of the first set of fins, wherein the first patterning process is configured to avoid substantial removal of an exposed portion of the second set of fins; and
performing a second patterning process that removes a subset of the second set of fins and a second portion of the material layer underlying the subset of the second set of fins, wherein the second patterning process is configured to avoid substantial removal of an exposed portion of the first set of fins.

### Claim 2 (depends on 1)

The method of claim 1, further comprising depositing a fill material in recesses formed by the removing of the first portion of the material layer and recesses formed by the removing of the second portion of the material layer.

### Claim 3 (depends on 2)

The method of claim 2, further comprising selectively removing the material layer after depositing the fill material.

### Claim 4 (depends on 1)

The method of claim 1, wherein the forming of the first set of fins and the second set of fins includes forming a spacer material on the material layer, wherein the spacer material separates each fin of the first set of fins from each fin of the second set of fins.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first patterning process is configured to avoid substantial removal of a first exposed portion of the spacer material, and wherein the second patterning process is configured to avoid substantial removal of a second exposed portion of the spacer material.

### Claim 6 (depends on 4)

The method of claim 4, wherein the forming of the first set of fins and the second set of fins further includes:
performing a first deposition and etch back process with a first material to define the first set of fins;
performing a second deposition and etch back process with the spacer material, such that the spacer material is disposed on sidewalls of fins of the first set of fins; and
performing a third deposition and etch back process with a second material to define the second set of fins, wherein fins of the second set of fins are disposed between spaces defined between the spacer material.

### Claim 7 (depends on 6)

The method of claim 6, wherein the forming of the first set of fins and the second set of fins further includes:
forming mandrels on the material layer, wherein the first deposition and etch back process forms the first material on sidewalls of the mandrels; and
after removing the mandrels, performing the second deposition and etch back process.

### Claim 8 (depends on 1)

The method of claim 1, wherein a thickness of fins of the first set of fins and a thickness of fins of the second set of fins each correspond with a thickness of integrated circuit features to be formed on the workpiece.

### Claim 9

A method comprising:
forming first fins, second fins, and third fins over a material layer, wherein the second fins are disposed along sidewalls of the first fins and the third fins are disposed along sidewalls of the second fins;
forming a first patterning layer over the first fins, the second fins, and the third fins;
patterning the first patterning layer to expose a portion of the first fins;
performing a first etching process configured to etch the exposed portion of the first fins and the material layer underlying the exposed portion of the first fins and further configured to avoid substantial etching of the second fins and the third fins;
forming a second patterning layer over the first fins, the second fins, and the third fins;
patterning the second patterning layer to expose a portion of the third fins;
performing a second etching process configured to etch the exposed portion of the third fins and the material layer underlying the exposed portion of the third fins and further configured to avoid substantial etching of the first fins and the second fins;
depositing a fill material in at least one recess formed in the material layer by the first etching process and the second etching process; and
removing remaining first fins, second fins, and third fins.

### Claim 10 (depends on 9)

The method of claim 9, further comprising removing remaining material layer.

### Claim 11 (depends on 9)

The method of claim 9, wherein the forming the first patterning layer and the forming the second patterning layer includes forming a tri-layer resist.

### Claim 12 (depends on 9)

The method of claim 9, wherein the second patterning layer fills at least one recess formed in the material layer by the first etching process.

### Claim 13 (depends on 9)

The method of claim 9, wherein the remaining first fins, second fins, and third fins are removed before depositing the fill material.

### Claim 14 (depends on 9)

The method of claim 9, wherein the remaining first fins, second fins, and third fins are removed after depositing the fill material.

### Claim 15 (depends on 9)

The method of claim 9, wherein the first fins includes silicon and nitrogen, the second fins include amorphous silicon, and the third fins include an ashing removable dielectric.

### Claim 16

A method comprising:
forming a fin patterning layer that includes a first spacer material, a second spacer material, and a third spacer material over a material layer of a workpiece, wherein the first spacer material defines a first set of fins and the third spacer material defines a second set of fins, wherein the second spacer material separates each fin of the first set of fins from each fin of the second set of fins, and wherein the first spacer material, the second spacer material, and the third spacer material are different materials;
performing a first fin-cut process that includes:
forming a first patterned resist layer over the fin patterning layer, wherein the first patterned resist layer exposes a first subset of the first set of fins, a first subset of the second set of fins, and a first subset of the second spacer material,
selectively etching the first subset of the first set of fins to expose a first portion of the material layer, and
selectively etching the exposed first portion of the material layer, thereby forming a first recess in the material layer;
performing a second fin-cut process that includes:
forming a second patterned resist layer over the fin patterning layer, wherein the second patterned resist layer exposes a second subset of the first set of fins, a second subset of the second set of fins, and a second subset of the second spacer material,
selectively etching the second subset of the second set of fins to expose a second portion of the material layer, and
selectively etching the exposed second portion of the material layer, thereby forming a second recess in the material layer;
depositing a fill material in the first recess and the second recess; and
removing the fin patterning layer and the material layer.

### Claim 17 (depends on 16)

The method of claim 16, wherein the fin patterning layer is removed before depositing the fill material in the first recess and the second recess.

### Claim 18 (depends on 16)

The method of claim 16, wherein the fin patterning layer is removed after depositing the fill material in the first recess and the second recess.

### Claim 19 (depends on 16)

The method of claim 16, wherein the forming the fin patterning layer includes:
forming mandrels on the material layer;
depositing the first spacer material on the material layer to define the first set of fins, wherein the first set of fins are disposed on sidewalls of the mandrels; and
after removing the mandrels, depositing the second spacer material and the third spacer material on the material layer between fins of the first set of fins.

### Claim 20 (depends on 19)

The method of claim 19, wherein the depositing of the second spacer material and the third spacer material includes:
depositing a directed self-assembly material on the material layer; and
curing the directed self-assembly material.