# US 10,312,100 B2 · Conductor including nano-patterned substrate and method of manufacturing the conductor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,100 B2 - Document ID: US10312100B2 - Status: Granted - Kind: B2 - Application number: 15/334,684 - Filed: 2016-10-26 - Published: 2017-04-27 - Granted: 2019-06-04 - Earliest claimed: 2015-10-26 - Assignees: Samsung Electronics Co., Ltd.; Korea Advanced Institute of Science and Technology - Applicants: Samsung Electronics Co., Ltd.; Korea Advanced Institute of Science and Technology - Inventors: Wonhee Ko; Hyowon Kim; Jiyeon Ku; Donggyu Kim; Seunghwa Ryu; Seongjun Jeong - Web page: https://patentgrep.com/patent/US10312100B2 ## CPC - H10P 50/642: {Chemical etching} - H10D 64/205: {Nanosized electrodes, e.g. nanowire electrodes} - H10P 14/3404: {being Group IVA materials} - H10P 50/694: {characterised by their behaviour during the process, e.g. soluble masks or redeposited masks} - H10W 20/4462: {Carbon or carbon-containing materials, e.g. graphene} - H10W 40/25: characterised by their materials - H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 40/259: {Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A conductor including a graphene layer and a method of manufacturing the conductor are provided. The conductor may further include a nano pattern disposed on a substrate, and the graphene layer may be formed on the nano pattern. The nano pattern may have any various shapes and include a material that interacts with the graphene layer. The nano pattern and the graphene layer included in the conductor may interact with each other, such that the electric characteristics of the conductor are maintained while the heat transfer characteristics thereof are improved. ## Claims ### Claim 1 A conductor comprising: a substrate; a nano pattern disposed on the substrate; and a graphene layer disposed over the nano pattern, wherein the substrate and the nano pattern comprise a same material; and wherein the nano pattern and the substrate are an opaque body. ### Claim 2 (depends on 1) The conductor of claim 1, wherein the nano pattern comprises a plurality of linear structures extending in a same direction, wherein each of the plurality of linear structures is spaced apart from each other of the plurality of linear structures. ### Claim 3 (depends on 1) The conductor of claim 1, wherein the nano pattern comprises a plurality of regularly spaced first linear structures, each extending in a first direction, and a plurality of regularly spaced second linear structures, each extending in a second direction, wherein the plurality of first linear structures intersect with the plurality of second linear structures, thereby forming a regular lattice. ### Claim 4 (depends on 1) The conductor of claim 1, wherein the nano pattern comprises a plurality of first linear structures and a plurality of second linear structures, wherein the plurality of first linear structures intersect with the plurality of second linear structures, thereby forming an irregular lattice. ### Claim 5 (depends on 1) The conductor of claim 1, wherein the nano pattern comprises a plurality of first pattern elements and a plurality of second pattern elements alternately arranged with the plurality of first pattern elements. ### Claim 6 (depends on 5) The conductor of claim 5, wherein each of the plurality of first pattern elements comprises at least one of Pt, Cu, Ag, and Au, and each of the plurality of second pattern elements comprises at least one of Ni, Co, and Ti. ### Claim 7 A conductor comprising: a substrate; a nano pattern disposed on the substrate; and a two-dimensional (2D) material layer disposed over the nano pattern, wherein the substrate and the nano pattern comprise a same; and wherein the nano pattern and the substrate are an opaque body. ### Claim 8 (depends on 7) The conductor of claim 7, wherein the 2D material layer comprises at least one of molybdenum disulfide (MoS2) and tungsten disulfide (WS2). ### Claim 9 A method of manufacturing a conductor, the method comprising: depositing a mask layer over a substrate; removing a part of the mask layer thereby forming at least one opening in the mask layer, such that a remaining portion of the mask layer forms a nano pattern; etching a portion of the substrate through the at least one opening in the mask layer; removing the remaining portion of the mask layer; depositing a metal layer over the etched substrate; and forming a graphene layer over the substrate; wherein the metal layer comprises at least one of platinum (Pt), copper (Cu), silver (Ag), nickel (Ni), cobalt (Co), and gold (Au), wherein the metal layer is opaque. ### Claim 10 (depends on 9) The method of claim 9, wherein the mask layer is a block copolymer film comprising a first plurality of polymer blocks and a second plurality of polymer blocks. ### Claim 11 (depends on 10) The method of claim 10, wherein the removing the part of the mask layer comprises removing the first plurality of polymer blocks, and wherein the second plurality of polymer blocks forms the nano pattern. ### Claim 12 (depends on 9) The method of claim 9, wherein the nano pattern comprises a plurality of linear structures extending in a same direction, wherein each of the plurality of linear structures is separated from each other of the plurality of linear structures. ### Claim 13 (depends on 9) The method of claim 9, wherein the nano pattern comprises a regularly-spaced lattice. ### Claim 14 (depends on 9) The method of claim 9, wherein the nano pattern comprises an irregularly-spaced lattice. ### Claim 15 (depends on 9) The method of claim 9, wherein the substrate comprises at least one of silicon dioxide (SiO2), aluminum oxide (Al2O3), and glass.