# US 10,312,094 B2 · AlOx/InOx gate insulator for HEMT

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- Number: US 10,312,094 B2
- Document ID: US10312094B2
- Status: Granted
- Kind: B2
- Application number: 15/600,260
- Filed: 2017-05-19
- Published: 2017-11-30
- Granted: 2019-06-04
- Earliest claimed: 2016-05-25
- Assignees: Fujitsu Limited
- Applicants: Fujitsu Limited
- Inventors: Shirou Ozaki; Kozo Makiyama; Naoya Okamoto
- Web page: https://patentgrep.com/patent/US10312094B2

## CPC

- H10D 64/01358: {the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material}
- H02M 5/458: using semiconductor devices only
- H03F 1/3247: {using feedback acting on predistortion circuits (H03F1/3264 takes precedence)}
- H03F 3/193: with field-effect devices (H03F3/195 takes precedence)
- H03F 3/245: {with semiconductor devices only}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 64/685: {being perpendicular to the channel plane}
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10P 14/6312: {of Group III-V semiconductors}
- H10P 14/6322: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)}
- H10P 14/69391: {the material containing aluminium, e.g. Al2O3}
- H10P 14/69397: {the material containing two or more metal elements}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H02M 1/007: {Plural converter units in cascade (push-pull DC/DC converters with pre-regulator H02M3/3374; DC-AC converters following a DC-DC stage including a high frequency transformer H02M7/4807; DC-AC converters following a DC-DC conversion stage generating periodically varying voltages H02M7/4826)}
- H02M 3/33573: {Full-bridge at primary side of an isolation transformer}
- H02M 3/33576: {having at least one active switching element at the secondary side of an isolation transformer}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D 64/516: {the thicknesses being non-uniform}
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/527: {Multiple bond wires having different sizes}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- H03F: AMPLIFIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.

## Claims

### Claim 1

A semiconductor device comprising:
a first semiconductor layer formed, on a substrate, of a nitride semiconductor;
a second semiconductor layer formed, on the first semiconductor layer, of a In0.18Al0.82N;
a source electrode formed on the second semiconductor layer;
a drain electrode formed on the second semiconductor layer;
a metal oxide film formed in the second semiconductor layer; and
a gate electrode formed on the metal oxide film,
wherein the metal oxide film includes AlOx and InOx, and
wherein AlOx/InOx in the metal oxide film is greater than or equal to 10.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein a film thickness of the metal oxide film is greater than or equal to 1 nm and less than or equal to 3 nm.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein, in the metal oxide film, a film thickness of an area located immediately below the gate electrode is thicker than a film thickness of an area other than the area located immediately below the gate electrode.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein a part of the second semiconductor layer is removed to form a gate recess at an area on which the gate electrode is to be formed, and
wherein the metal oxide film is formed on a bottom surface and side surfaces of the gate recess, and
wherein the gate electrode is formed on the gate recess.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein an insulation film is formed, on the metal oxide film, other than an area on which the gate electrode is formed.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1,
wherein an insulation film is formed on the metal oxide film, and
wherein the gate electrode is formed on the insulation film.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the first semiconductor layer is formed of a material including GaN.

### Claim 8 (depends on 1)

A power source device comprising:
the semiconductor device according to claim 1.

### Claim 9 (depends on 1)

An amplifier comprising:
the semiconductor device according to claim 1.