# US 10,312,086 B2 · Methods of fabricating a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,086 B2 - Document ID: US10312086B2 - Status: Granted - Kind: B2 - Application number: 15/729,370 - Filed: 2017-10-10 - Published: 2018-02-01 - Granted: 2019-06-04 - Earliest claimed: 2016-05-16 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Kuo-Yao Chou - Web page: https://patentgrep.com/patent/US10312086B2 ## CPC - H10P 76/4088: {Processes for improving the resolution of the masks} - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - H10P 76/4083: {characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks} - H10P 76/4085: {characterised by the processes involved to create the masks} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for processing a substrate is provided. The method comprises forming a patterned photoresist over a first material, the patterned photoresist comprising island portions and shaped spaces surrounding the island portions. An area of each of the island portions is reduced to enlarge the shaped spaces, which are filled with a second material. The island portions are removed to form first openings in the second material. Portions of the first material exposed through the first openings are removed to form second openings in the first material. Portions of a substrate exposed through the second openings are removed to form holes in the substrate. Methods of patterning a substrate and methods of forming a hole pattern in a substrate are also disclosed. ## Claims ### Claim 1 A method of fabricating a semiconductor device, comprising: forming a patterned photoresist over a first material, the patterned photoresist comprising island portions and shaped spaces surrounding the island portions; reducing an area of each of the island portions to enlarge the shaped spaces; forming a second material in the enlarged shaped spaces, the second material extending between adjacent island portions and a top surface of the second material substantially coplanar with a top surface of the island portions; removing the island portions to form first openings in the second material; removing portions of the first material exposed through the first openings to form second openings in the first material; and removing portions of a target material exposed through the second openings to form holes in the target material. ### Claim 2 (depends on 1) The method of claim 1, wherein forming a patterned photoresist over a first material comprises forming the patterned photoresist on a first material comprising silicon dioxide, silicon nitride, nitride, oxynitride, silicon oxynitride, carbide, silicon carbide, a metal nitride, or a metal oxide. ### Claim 3 (depends on 1) The method of claim 1, wherein forming a patterned photoresist over a first material comprises forming ring-shaped spaces and the island portions in the patterned photoresist. ### Claim 4 (depends on 3) The method of claim 3, wherein forming ring-shaped spaces and the island portions in the patterned photoresist comprises forming circular rings, irregularly-shaped rings, triangular rings, rectangular rings, or hexagonal rings in the patterned photoresist. ### Claim 5 (depends on 1) The method of claim 1, wherein forming first openings in the second material and forming second openings in the first material comprises forming the first openings and the second openings using a single mask. ### Claim 6 A method of fabricating a semiconductor device, comprising: patterning a photoresist over a first material over a target material, the patterned photoresist comprising island portions and spaces laterally adjacent to the island portions; removing peripheral portions of the island portions to enlarge the spaces; completely filling the enlarged spaces with a second material; forming first openings in the second material by removing the island portions; forming second openings in the first material exposed through the first openings; and removing the target material exposed through the second openings to form holes in the target material. ### Claim 7 (depends on 6) The method of claim 6, wherein patterning a photoresist over a first material over a target material comprises forming shaped spaces laterally surrounding the island portions. ### Claim 8 (depends on 6) The method of claim 6, wherein forming first openings in the second material comprises forming at least one of star-shaped openings and circular openings in the second material. ### Claim 9 (depends on 8) The method of claim 8, wherein forming second openings in the first material comprises forming circular openings in the first material. ### Claim 10 (depends on 6) The method of claim 6; wherein removing the target material exposed through the second openings to form holes in the target material comprises forming the holes in the target material at a lateral width of less than about 20 nm. ### Claim 11 A method of fabricating a semiconductor device, comprising: forming a pattern comprising island portions and spaces laterally adjacent to the island portions in a photoresist over a first material; removing peripheral portions of the island portions to enlarge the spaces; forming a second material in the enlarged spaces and over the island portions; selectively removing portions of the second material while remaining portions of the second material extend between adjacent island portions; removing the island portions to form first openings in the second material; removing portions of the first material to form second openings in the first material; and forming holes in portions of a target material exposed through the second openings. ### Claim 12 (depends on 11) The method of claim 11, wherein selectively removing portions of the second material comprises removing the second material overlying the island portions. ### Claim 13 (depends on 11) The method of claim 11, wherein forming second openings in the first material comprises aligning the first openings in the second material with the second openings in the first material. ### Claim 14 (depends on 11) The method of claim 11, wherein forming holes in portions of a target material exposed through the second openings comprises forming circular holes in the target material. ### Claim 15 (depends on 11) The method of claim 11, wherein selectively removing portions of the second material while remaining portions of the second material extend between adjacent island portions comprises selectively removing portions of the second material over top surfaces of the island portions, top surfaces of the island portions substantially coplanar with top surfaces of the remaining portions of the second material.