# US 10,312,083 B2 · Method for selective epitaxial growth of a group III-nitride layer

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- Number: US 10,312,083 B2
- Document ID: US10312083B2
- Status: Granted
- Kind: B2
- Application number: 15/849,579
- Filed: 2017-12-20
- Published: 2018-07-26
- Granted: 2019-06-04
- Earliest claimed: 2016-12-21
- Assignees: Imec Vzw
- Applicants: Imec Vzw
- Inventors: Hu Liang; Yoganand Saripalli
- Web page: https://patentgrep.com/patent/US10312083B2

## CPC

- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3246: {Monolayers}
- H10P 14/3416: {Nitrides}
- H10P 14/3442: {N-type}
- H10P 14/3444: {P-type}
- H10P 14/3602: {In-situ cleaning}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

## Claims

### Claim 1

A method for forming a layer of a Group III-Nitride material comprising:
providing a substrate having a main surface comprising a layer of a first Group III-nitride material, the substrate further comprising, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material;
performing a thermal treatment process while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material;
introducing, subsequently, at least one Group III-metal organic precursor gas into the gas mixture at the temperature for growing, thereby forming, at least in the opening on the exposed first Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, wherein the gas mixture is free of hydrogen gas; and
upon formation of the layer in the opening at a moment the layer and the dielectric layer abut a common planar surface, introducing H2 gas to the gas mixture.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the gas mixture consists of the nitrogen containing gas and a carrier gas.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the method further comprises, during the formation of the layer of the second Group III-nitride material, introducing, into the gas mixture, a dopant element.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the dopant element is a p-type or an n-type.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the first Group III-nitride material is a binary, a ternary, or a quaternary Group III-nitride material.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the second Group III-nitride material is a binary, a ternary, or quaternary Group III-nitride material.

### Claim 7 (depends on 1)

A method for manufacturing an enhancement mode Group III-nitride HEMT device, the method comprising:
forming a layer of a second Group III-nitride material according to claim 1, wherein the opening is a gate region;
forming, in the gate region, a gate contact to the layer of the second Group III-nitride material; and
forming, source/drain contacts, through the dielectric layer, to the layer of the first Group III-nitride material, wherein the layer of the first Group III-nitride material extends completely over the main surface and wherein the substrate further comprises, beneath the layer, a stack of layers, each layer comprising a Group III-nitride material.