# US 10,312,080 B2 · Method for forming amorphous silicon multuple layer structure

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- Number: US 10,312,080 B2
- Document ID: US10312080B2
- Status: Granted
- Kind: B2
- Application number: 15/859,750
- Filed: 2018-01-02
- Published: 2018-07-05
- Granted: 2019-06-04
- Earliest claimed: 2017-01-03
- Assignees: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicants: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Inventors: Mei-Ling Chen; Wei-Hsin Liu; Yi-Wei Chen; Ching-Hsiang Chang; Jui-Min Lee; Chia-Lung Chang; Tzu-Chin Wu; Shih-Fang Tzou
- Web page: https://patentgrep.com/patent/US10312080B2

## CPC

- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3454: {Amorphous}
- H10P 14/38: {characterised by treatments done after the formation of the materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.

## Claims

### Claim 1

A method for forming an amorphous silicon multiple layer structure, comprising:
providing a nitrogen-containing material layer;
forming a first amorphous silicon layer on the nitrogen-containing material layer, wherein the first amorphous silicon layer comprises a plurality of hydrogen atoms disposed therein, and wherein the hydrogen atoms gas enters into the nitrogen-containing material layer gradually after the first amorphous silicon layer is formed;
performing an ultraviolet (UV) curing step to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer and the nitrogen-containing material layer; and
forming a second amorphous silicon layer on the first amorphous silicon layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein a thickness of the first amorphous silicon layer is less than 300 angstroms.

### Claim 3 (depends on 1)

The method of claim 1, further comprising forming a mask layer on the second amorphous silicon layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the UV curing step is an in-situ UV curing step.

### Claim 5 (depends on 1)

The method of claim 1, wherein the UV curing step is an ex situ UV curing step.

### Claim 6 (depends on 1)

The method of claim 1, wherein the material of the nitrogen-containing material layer comprises silicon nitride or silicon carbon nitride.

### Claim 7 (depends on 1)

The method of claim 1, further comprising forming a plurality of amorphous silicon layers on the second amorphous silicon layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the second amorphous silicon layer has a flat surface.

### Claim 9 (depends on 1)

The method of claim 1, wherein the temperature of the UV curing step is between 300° C.-600° C.

### Claim 10 (depends on 1)

The method of claim 1, wherein the pressure of the UV curing step is less than 10 torr.

### Claim 11 (depends on 1)

The method of claim 1, wherein time of the UV curing step is less than 5 minutes.

### Claim 12 (depends on 1)

The method of claim 1, wherein the first amorphous silicon layer and the second amorphous silicon layer are formed by a plasma enhanced chemical vapor deposition (PECVD) method.

### Claim 13 (depends on 1)

The method of claim 1, wherein the PECVD deposition gas comprises monosilane (SiH4).