# US 10,312,078 B2 · Nitride film forming method and storage medium

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- Number: US 10,312,078 B2
- Document ID: US10312078B2
- Status: Granted
- Kind: B2
- Application number: 15/466,264
- Filed: 2017-03-22
- Published: 2017-09-28
- Granted: 2019-06-04
- Earliest claimed: 2016-03-23
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Hiroki Murakami; Daisuke Suzuki; Takahiro Miyahara
- Web page: https://patentgrep.com/patent/US10312078B2

## CPC

- H10P 14/6512: {by exposure to a gas or vapour}
- C23C 16/02: Pretreatment of the material to be coated (C23C16/04 takes precedence)
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/345: {Silicon nitride}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

## Claims

### Claim 1

A nitride film forming method, comprising:
performing a pretreatment of adsorbing a chlorine-containing gas onto a surface of a first base film and a surface of a second base film, the first base film and the second base film being formed on a substrate to be processed, by supplying the chlorine-containing gas while heating the substrate to be processed to a predetermined temperature; and
forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature,
wherein the chlorine-containing gas used in the step of performing the pretreatment is at least one gas selected from a group consisting of a Cl2 gas, a HCl gas and a BCl3 gas.

### Claim 2 (depends on 1)

The method of claim 1, wherein in a case where the step of forming the nitride film is performed by the ALD method, the raw material gas is supplied at first.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first base film is relatively high in adsorptivity of the chlorine-containing gas and the second base film is relatively low in adsorptivity of the chlorine-containing gas.

### Claim 4 (depends on 3)

The method of claim 3, wherein the first base film is a silicon oxide film, the second base film is a silicon nitride film, and the nitride film formed on the first base film and the second base film is a silicon nitride film.

### Claim 5 (depends on 4)

The method of claim 4, wherein a raw material gas used for forming the silicon nitride film is any one of dichlorosilane, monochlorosilane, trichlorosilane, silicon tetrachloride, hexachlorodisilane, monosilane, disilane and an organic silane-based compound.

### Claim 6 (depends on 4)

The method of claim 4, wherein the step of forming the nitride film is performed at 400 to 700 degrees C. in the case of the ALD method and at 600 to 800 degrees C. in the case of the CVD method.

### Claim 7 (depends on 1)

The method of claim 1, wherein the step of performing the pretreatment is performed at 200 to 800 degrees C.

### Claim 8 (depends on 1)

The method of claim 1, wherein the step of performing the pretreatment and the step of forming the nitride film are continuously performed in the same apparatus.

### Claim 9 (depends on 8)

The method of claim 8, wherein the step of performing the pretreatment and the step of forming the nitride film are performed at the same temperature.

### Claim 10 (depends on 1)

The method of claim 1, wherein the nitriding gas used in the step of forming the nitride film is an ammonia gas, a hydrazine gas, or a hydrazine derivative gas.

### Claim 11 (depends on 1)

A non-transitory computer-readable storage medium storing a program operated on a computer and configured to control a processing apparatus,
wherein the program is configured to, when executed, cause the computer to control the processing apparatus so that the method of claim 1 is performed.