Creating ion energy distribution functions (IEDF)
AssigneeApplied Materials, Inc.
InventorsLeonid Dorf, Travis Koh, Olivier Luere, Olivier Joubert, Philip A. Kraus, Rajinder Dhindsa, James Hugh Rogers
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsLeonid Dorf, Travis Koh, Olivier Luere, Olivier Joubert, Philip A. Kraus, Rajinder Dhindsa, James Hugh Rogers
Estimating the term…
Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.
A method, comprising:
Dependencies are inferred from the claim text.