# US 10,312,026 B2 · High energy density capacitor with high aspect micrometer structures and a giant colossal dielectric material

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- Number: US 10,312,026 B2
- Document ID: US10312026B2
- Status: Granted
- Kind: B2
- Application number: 15/287,662
- Filed: 2016-10-06
- Published: 2017-01-26
- Granted: 2019-06-04
- Earliest claimed: 2015-06-09
- Assignees: Smart Hybird Systems Incorporated
- Applicants: Smart Hybird Systems Incorporated
- Inventors: James W. Andrakin
- Web page: https://patentgrep.com/patent/US10312026B2

## CPC

- H01G 4/385: {Single unit multiple capacitors, e.g. dual capacitor in one coil}
- H01G 2/106: {Fixing the capacitor in a housing}
- H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
- H01G 4/224: Housing; Encapsulation
- H01G 4/232: electrically connecting two or more layers of a stacked or rolled capacitor
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G 4/38: Multiple capacitors, i.e. structural combinations of fixed capacitors
- H01G 2/08: Cooling arrangements; Heating arrangements; Ventilating arrangements
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A high density energy storage system including a giant-colossal dielectric thin film material electrically insulating between two electrodes configured to have increased overlapping surface area.

## Claims

### Claim 1

A high energy density capacitor system, the system comprising:
a plurality of capacitor modules each including:
a first electrode having a first electrical terminal, first protrusions with a height to width ratio of at least 100 to 1, and a first electrically conductive bus bar that electrically and physically couples each of the first protrusion together and to the first electrical terminal;
a second electrode adjacent to the first electrode; and
a non-conductive film comprising a giant-colossal dielectric material positioned between the first electrode and the second electrode such that the first electrode and the second electrode are not electrically coupled to each other.

### Claim 2 (depends on 1)

The system of claim 1, wherein the first electrode comprises a first slab and the first protrusions are a plurality of first concentric rings that protrude from a bottom of the first slab, and the second electrode comprises a second slab, a second electrical terminal, second protrusions with a height to width ratio of at least 100 to 1, and a second electrically conductive bus bar that electrically and physically couples each of the second protrusion together and to the second electrical terminal, wherein the second protrusions are a plurality of second concentric rings that protrude from a top of the second slab.

### Claim 3 (depends on 2)

The system of claim 2, wherein the plurality of first concentric rings and second concentric rings are configured to interlock when the bottom of the first electrode is positioned on the top of the second electrode.

### Claim 4 (depends on 3)

The system of claim 3, wherein one or more of the capacitor modules comprise one or more cooling channels that extend through both the first electrode and the second electrode.

### Claim 5 (depends on 1)

The system of claim 1, wherein the second electrode comprises a plurality of cavities and the first electrode comprises a slab and the first protrusions extend from the slab and fill the cavities.

### Claim 6 (depends on 5)

The system of claim 5, wherein a perimeter of each of the cavities and each of the protrusions are hexagonal.

### Claim 7 (depends on 5)

The system of claim 5, wherein a perimeter of each of the cavities and each of the protrusions are square.

### Claim 8 (depends on 5)

The system of claim 5, wherein a perimeter of each of the cavities and each of the protrusions are triangular.

### Claim 9 (depends on 5)

The system of claim 5, wherein a perimeter of each of the cavities and each of the protrusions are circular.

### Claim 10 (depends on 5)

The system of claim 5, wherein the non-conductive film comprises a low leakage dielectric layer and a high break down dielectric layer that sandwich a layer of the giant-colossal dielectric material between the first electrode and the second electrode.

### Claim 11 (depends on 10)

The system of claim 10, wherein a breakdown value of the high break down dielectric layer is 0.5 to 2 volts per nanometer of thickness and electronic leakage value of the low leakage dielectric layer is less than or equal to 0.5 percent.

### Claim 12 (depends on 10)

The system of claim 10, wherein the giant-colossal dielectric material is comprised of compound dielectric material of two or more dielectric materials.

### Claim 13 (depends on 10)

The system of claim 10, wherein the giant-colossal dielectric material is comprised of complex dielectric material of two or more dielectric materials.

### Claim 14 (depends on 1)

The system of claim 1, wherein two or more of the capacitor modules are electrically coupled together in series, in parallel or both.

### Claim 15

A high energy density capacitor, the capacitor comprising:
a first electrode having a first electrical terminal, first protrusions with a height to width ratio of at least 100 to 1, and a first electrically conductive bus bar that electrically and physically couples each of the first protrusion together and to the first electrical terminal;
a second electrode adjacent to the first electrode; and
a non-conductive film comprising a giant-colossal dielectric material positioned between the first electrode and the second electrode such that the first electrode and the second electrode are not electrically coupled to each other.

### Claim 16 (depends on 15)

The capacitor of claim 15, wherein the first electrode comprises a first slab and the first protrusions are a plurality of first concentric rings that protrude from a bottom of the first slab, and the second electrode comprises a second slab, a second electrical terminal, second protrusions with a height to width ratio of at least 100 to 1, and a second electrically conductive bus bar that electrically and physically couples each of the second protrusion together and to the second electrical terminal, wherein the second protrusions are a plurality of second concentric rings that protrude from a top of the second slab.

### Claim 17 (depends on 16)

The capacitor of claim 16, wherein the plurality of first concentric rings and second concentric rings are configured to interlock when the bottom of the first electrode is positioned on the top of the second electrode.

### Claim 18 (depends on 17)

The capacitor of claim 17, further comprising one or more cooling channels that extend through both the first electrode and the second electrode.

### Claim 19 (depends on 15)

The capacitor of claim 15, wherein the second electrode comprises a plurality of cavities and the first electrode comprises a slab and the first protrusions extend from the slab and fill the cavities.

### Claim 20 (depends on 19)

The capacitor of claim 19, wherein a perimeter of each of the cavities and each of the protrusions are hexagonal.

### Claim 21 (depends on 19)

The capacitor of claim 19, wherein a perimeter of each of the cavities and each of the protrusions are square.

### Claim 22 (depends on 19)

The capacitor of claim 19, wherein a perimeter of each of the cavities and each of the protrusions are triangular.

### Claim 23 (depends on 19)

The capacitor of claim 19, wherein a perimeter of each of the cavities and each of the protrusions are circular.

### Claim 24 (depends on 19)

The capacitor of claim 19, wherein the non-conductive film comprises a low leakage dielectric layer and a high break down dielectric layer that sandwich a layer of the giant-colossal dielectric material between the first electrode and the second electrode.

### Claim 25 (depends on 24)

The capacitor of claim 24, wherein a breakdown value of the high break down dielectric layer is 0.5 to 2 volts per nanometer of thickness and electronic leakage value of the low leakage dielectric layer is less than or equal to 0.5 percent.

### Claim 26 (depends on 24)

The capacitor of claim 24, wherein the giant-colossal dielectric material is comprised of compound dielectric material of two or more dielectric materials.

### Claim 27 (depends on 24)

The capacitor of claim 24, wherein the giant-colossal dielectric material is comprised of complex dielectric material of two or more dielectric materials.