# US 10,311,992 B2 · Transparent conducting films including complex oxides > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,311,992 B2 - Document ID: US10311992B2 - Status: Granted - Kind: B2 - Application number: 14/815,546 - Filed: 2015-07-31 - Published: 2016-06-23 - Granted: 2019-06-04 - Earliest claimed: 2014-08-01 - Assignees: The Penn State Research Foundation - Applicants: The Penn State Research Foundation - Inventors: Roman Engel-Herbert; Lei Zhang - Web page: https://patentgrep.com/patent/US10311992B2 ## CPC - H01B 1/08: oxides - C01G 31/006: {Compounds containing vanadium, with or without oxygen or hydrogen, and containing two or more other elements} - C01G 31/02: Oxides - C23C 14/08: Oxides (C23C14/10 takes precedence) - C23C 14/22: characterised by the process of coating - C01P 2006/40: Electric properties - C01P 2006/60: Optical properties, e.g. expressed in CIELAB-values - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract Transparent conducting films including an alkaline earth, transition metal oxide and their optimization of electrical conductivity and optical transparency by aliovalent substitution, which are useful as electrodes for semiconductors and other electronic devices are disclosed. Such materials include thin films of an aliovalent substituted transition metal oxides of Formula (I): A1-xA′xB1-yB′yO3-d (I) or a transition metal oxide of Formula (II): (ABO3-d)m(A′B′O3-d′)n. ## Claims ### Claim 1 A transparent conducting film having a transmittance of about 80% or more at a wavelength of 550 nm comprising a transition metal oxide of formula: A1-xA′xB1-yB′yO3-d (I) wherein A and A′ are different from each other and A represents one or more divalent alkaline earth cations; A′ represents either one or more trivalent cations or one or more monovalent cations; B and B′ are different from each other and B represents a transition metal selected from group VB; d is a value between −0.5≤d≤0.5; and the values for x and y are 0≤x≤1, 0≤y≤1; and wherein B′ is present and represents one or more group VIB transition metal elements to adjust a Fermi level position in a conduction band of the transition metal oxide. ### Claim 2 (depends on 1) The film according to claim 1, wherein A′ is present and represents one or more of a trivalent cation of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium to adjust a Fermi level position in a conduction band of the transition metal oxide. ### Claim 3 (depends on 1) The film according to claim 1, wherein A′ is present and represents one or more of a monovalent ion of lithium, sodium, potassium, rubidium or cesium to adjust a Fermi level position in a conduction band of the transition metal oxide. ### Claim 4 (depends on 1) The film according to claim 1 characterized by an electron mobility of about 1˜100 cm2/V/sec and/or a carrier density of about 1×1021˜2×1023 cm−3, and/or a thickness in the range of about 5 to 50 nm. ### Claim 5 (depends on 1) An electrode material comprising at least one transparent conducting film according to claim 1. ### Claim 6 (depends on 5) An electrode comprising the electrode material of claim 5 on a substrate. ### Claim 7 (depends on 6) The electrode according to claim 6, wherein the substrate is silicon, germanium, or a compound semiconductor with zinc blende or wurtzite crystal structure, with or without a thin transparent coating. ### Claim 8 (depends on 6) The electrode according to claim 6, wherein the substrate is a glass substrate, a plastic substrate, or an oxide deposited substrate, and has transmittance. ### Claim 9 (depends on 1) The film according to claim 1 having a conductivity of about 2000 S/cm (resistivity 5×10−4 Ω×cm) to about 100000 S/cm (resistivity 1×10−6 Ω×cm) at room temperature. ### Claim 10 (depends on 1) The film according to claim 1, wherein A represents one or more of Mg, Ca, Sr, or Ba; A′ represents one or more of La, Nd, Gd, Dy, or another rare earth element; B represents one or more of V, Nb, or Ta, B′ represents one or more of Cr, Mo or W. ### Claim 11 (depends on 10) The film according to claim 10, wherein 0.8≤y≤1.0 and 0