# US 10,311,960 B2 · Shift register, semiconductor device, display device, and electronic device

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- Number: US 10,311,960 B2
- Document ID: US10311960B2
- Status: Granted
- Kind: B2
- Application number: 15/584,117
- Filed: 2017-05-02
- Published: 2017-10-26
- Granted: 2019-06-04
- Earliest claimed: 2005-10-18
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Atsushi Umezaki
- Web page: https://patentgrep.com/patent/US10311960B2

## CPC

- G11C 19/184: {with field-effect transistors, e.g. MOS-FET}
- G09G 3/3648: {using an active matrix (G09G3/367 - G09G3/3696 take precedence)}
- G09G 3/3677: {suitable for active matrices only}
- G09G 3/3266: Details of drivers for scan electrodes
- G09G 2300/0426: Layout of electrodes and connections
- G09G 2310/0267: Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
- G09G 2310/0275: Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current
- G09G 2310/0286: Details of a shift registers arranged for use in a driving circuit
- G09G 2310/0289: Details of voltage level shifters arranged for use in a driving circuit
- G09G 2320/02: Improving the quality of display appearance
- G09G 2320/043: Preventing or counteracting the effects of ageing
- G09G 2330/021: Power management, e.g. power saving
- G09G 2330/023: using energy recovery or conservation
- G11C: STATIC STORES (semiconductor memory devices H10B)
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)

## Abstract

The invention provides a semiconductor device and a shift register, in which low noise is caused in a non-selection period and a transistor is not always on. First to fourth transistors are provided. One of a source and a drain of the first transistor is connected to a first wire, the other of the source and the drain thereof is connected to a gate electrode of the second transistor, and a gate electrode thereof is connected to a fifth wire. One of a source and a drain of the second transistor is connected to a third wire and the other of the source and the drain thereof is connected to a sixth wire. One of a source and a drain of the third transistor is connected to a second wire, the other of the source and the drain thereof is connected to the gate electrode of the second transistor, and a gate electrode thereof is connected to a fourth wire. One of a source and a drain of the fourth transistor is connected to the second wire, the other of the source and the drain thereof is connected to the sixth wire, and a gate electrode thereof is connected to the fourth wire.

## Claims

### Claim 1

A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and a first electrode of the capacitor are electrically connected to a first node,
wherein a gate of the first transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, and a second electrode of the capacitor are electrically connected to a second node,
wherein a gate of the third transistor and a gate of the fourth transistor are electrically connected to a third node,
wherein the other of the source and the drain of the second transistor is electrically connected to a power source line of VSS,
wherein the other of the source and the drain of the third transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the sixth transistor are electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a power source line of VDD,
wherein the other of the source and the drain of the first transistor is electrically connected to a first clock signal line, and
wherein a gate of the second transistor is electrically connected a second clock signal line.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the gate of the third transistor and the gate of the fourth transistor are able to be in a floating state.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the one of the source and the drain of the first transistor, one of the source and the drain of the second transistor, the one of the source and the drain of the third transistor, and the first electrode of the capacitor are directly connected to the first node,
wherein the gate of the first transistor, the one of the source and the drain of the fourth transistor, the one of the source and the drain of the fifth transistor, the one of the source and the drain of the sixth transistor, and the second electrode of the capacitor are directly connected to the second node, and
wherein the gate of the third transistor and the gate of the fourth transistor are directly connected to the third node.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises a channel formation region comprising an amorphous silicon.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the gate of the third transistor is electrically connected to one of a source and a drain of a seventh transistor, and
wherein the gate of the fourth transistor is electrically connected to one of a source and a drain of an eighth transistor.

### Claim 6 (depends on 1)

A portable information terminal comprising:
a display portion comprising the semiconductor device according to claim 1.

### Claim 7

A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and a first electrode of the capacitor are electrically connected to a first node,
wherein a gate of the first transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, and a second electrode of the capacitor are electrically connected to a second node,
wherein a gate of the third transistor and a gate of the fourth transistor are electrically connected to a third node,
wherein the other of the source and the drain of the second transistor is electrically connected to a power source line of VSS,
wherein the other of the source and the drain of the third transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the sixth transistor are electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a power source line of VDD,
wherein the other of the source and the drain of the first transistor is able to be input a first clock signal,
wherein the gate of the third transistor and the gate of the fourth transistor are able to be controlled by the first clock signal, and
wherein a gate of the second transistor is able to be controlled by a second clock signal.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein the gate of the third transistor and the gate of the fourth transistor are able to be in a floating state.

### Claim 9 (depends on 7)

The semiconductor device according to claim 7,
wherein the one of the source and the drain of the first transistor, one of the source and the drain of the second transistor, the one of the source and the drain of the third transistor, and the first electrode of the capacitor are directly connected to the first node,
wherein the gate of the first transistor, the one of the source and the drain of the fourth transistor, the one of the source and the drain of the fifth transistor, the one of the source and the drain of the sixth transistor, and the second electrode of the capacitor are directly connected to the second node, and
wherein the gate of the third transistor and the gate of the fourth transistor are electrically connected to the third node.

### Claim 10 (depends on 7)

The semiconductor device according to claim 7, wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises a channel formation region comprising an amorphous silicon.

### Claim 11 (depends on 7)

The semiconductor device according to claim 7,
wherein the gate of the third transistor is electrically connected to one of a source and a drain of a seventh transistor, and
wherein the gate of the fourth transistor is electrically connected to one of a source and a drain of an eighth transistor.

### Claim 12 (depends on 7)

A portable information terminal comprising:
a display portion comprising the semiconductor device according to claim 7.

### Claim 13

A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and a first electrode of the capacitor are electrically connected to a first node,
wherein a gate of the first transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, and a second electrode of the capacitor are electrically connected to a second node,
wherein a gate of the third transistor and a gate of the fourth transistor are electrically connected to a third node,
wherein the other of the source and the drain of the second transistor is electrically connected to a power source line of VSS,
wherein the other of the source and the drain of the third transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the sixth transistor are electrically connected to the power source line of VSS,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a power source line of VDD,
wherein the other of the source and the drain of the first transistor is able to be input a first clock signal,
wherein the gate of the third transistor and the gate of the fourth transistor are able to be controlled by the first clock signal,
wherein a gate of the second transistor is able to be controlled by a second clock signal, and
wherein the seventh transistor is able to make the gate of the third transistor and the gate of the fourth transistor be in a floating state.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13,
wherein the one of the source and the drain of the first transistor, one of the source and the drain of the second transistor, the one of the source and the drain of the third transistor, and the first electrode of the capacitor are directly connected to the first node,
wherein the gate of the first transistor, the one of the source and the drain of the fourth transistor, the one of the source and the drain of the fifth transistor, the one of the source and the drain of the sixth transistor, and the second electrode of the capacitor are directly connected to the second node, and
wherein the gate of the third transistor and the gate of the fourth transistor are electrically connected to the third node.

### Claim 15 (depends on 13)

The semiconductor device according to claim 13, wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises a channel formation region comprising an amorphous silicon.

### Claim 16 (depends on 13)

The semiconductor device according to claim 13,
wherein the gate of the third transistor is electrically connected to one of a source and a drain of an eighth transistor, and
wherein the gate of the fourth transistor is electrically connected to one of a source and a drain of a ninth transistor.

### Claim 17 (depends on 13)

The semiconductor device according to claim 13, wherein the other of the source and the drain of the seventh transistor is electrically connected to the power source line of VSS.

### Claim 18 (depends on 13)

A portable information terminal comprising:
a display portion comprising the semiconductor device according to claim 13.

### Claim 19

A semiconductor device comprising:
a stage comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, a first electrode of the capacitor, and an output terminal of the stage are electrically connected to one another,
wherein a gate of the first transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, one of a source and a drain of the seventh transistor, and a second electrode of the capacitor are electrically connected to one another,
wherein a gate of the fourth transistor, the other of the source and the drain of the fourth transistor, and an output terminal of a preceding stage are electrically connected to one another,
wherein a power source line is electrically connected to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor, the other of the source and the drain of the fifth transistor, the other of the source and the drain of the sixth transistor, and the other of the source and the drain of the seventh transistor,
wherein a first clock signal line is electrically connected to the other of the source and the drain of the first transistor,
wherein a second clock signal line is electrically connected to a gate of the second transistor and a gate of the fifth transistor,
wherein a third clock signal line is electrically connected to a gate of the third transistor and a gate of the sixth transistor,
wherein the first clock signal line has a wider width than the power source line, and
wherein the power source line is located between the first to third clock signal lines and the output terminal of the stage, and each of the first to third clock signal lines is not located between the power source line and the output terminal of the stage.

### Claim 20

A semiconductor device comprising:
a stage comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, a first electrode of the capacitor, and an output terminal of the stage are electrically connected to one another,
wherein a gate of the first transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, one of a source and a drain of the seventh transistor, and a second electrode of the capacitor are electrically connected to one another,
wherein a gate of the fourth transistor, the other of the source and the drain of the fourth transistor, and an output terminal of a preceding stage are electrically connected to one another,
wherein a power source line is electrically connected to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor, the other of the source and the drain of the fifth transistor, the other of the source and the drain of the sixth transistor, and the other of the source and the drain of the seventh transistor,
wherein a first clock signal line is electrically connected to the other of the source and the drain of the first transistor,
wherein a second clock signal line is electrically connected to a gate of the second transistor and a gate of the fifth transistor,
wherein a third clock signal line is electrically connected to a gate of the third transistor and a gate of the sixth transistor,
wherein the first clock signal line has a wider width than the power source line,
wherein the power source line is located between the first to third clock signal lines and the output terminal of the stage, and each of the first to third clock signal lines is not located between the power source line and the output terminal of the stage, and
wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, and the seventh transistor comprises amorphous silicon.