Magnetic memory device

A magnetic memory device, comprising:

• a magnetic portion including a first portion, a second portion, and a third portion between the first portion and the second portion;
• a first magnetic layer;
• a first nonmagnetic layer provided between the first magnetic layer and the third portion;
• a second magnetic layer;
• a second nonmagnetic layer provided between the second magnetic layer and the first portion;
• a first element portion including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, and a third semiconductor region of a second conductivity type, the third semiconductor region being provided between the first semiconductor region and the second semiconductor region, the first semiconductor region being electrically connected to the second portion;
• a first interconnect electrically connected to the second magnetic layer;
• a second interconnect electrically connected to the second semiconductor region;
• a third interconnect electrically connected to the first magnetic layer;
• and
• a controller electrically connected to the first interconnect, the second interconnect, and the third interconnect,
• in a first operation, the controller setting the first interconnect to a first potential, setting the second interconnect to a second potential, and setting the third interconnect to a third potential, an absolute value of a difference between the second potential and the third potential being greater than an absolute value of a difference between the first potential and the third potential,
• in a second operation, the controller setting the first interconnect to a fourth potential, setting the second interconnect to a fifth potential, and setting the third interconnect to a sixth potential, an absolute value of a difference between the fifth potential and the sixth potential being less than an absolute value of a difference between the fourth potential and the sixth potential.