# US 10,311,198 B2 · Overlay design optimization > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,311,198 B2 - Document ID: US10311198B2 - Status: Granted - Kind: B2 - Application number: 15/119,306 - Filed: 2015-02-16 - Published: 2017-03-02 - Granted: 2019-06-04 - Earliest claimed: 2014-02-16 - Assignees: Nova Measuring Instruments Ltd. - Applicants: Nova Measuring Instruments Ltd. - Inventors: Gilad Barak; Tal Verdene; Michal Yachini; Dror Shafir; Changman Moon; Shay Wolfling - Web page: https://patentgrep.com/patent/US10311198B2 ## CPC - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching} - G03F 7/70683: {Mark designs} - G06F 30/392: Floor-planning or layout, e.g. partitioning or placement - G03F 7/70641: {Focus} - H10D 64/018: {Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates} - H10P 72/0618: {using identification means, e.g. labels on substrates or labels on containers} - H10P 76/204: {of organic photoresist masks} - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A sample comprising an overlay target is presented. The overlay target comprises at least one pair of patterned structures, the patterned structures of the pair being accommodated in respectively bottom and top layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures has at least one pattern parameter optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range. ## Claims ### Claim 1 A sample comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the sample and one of underneath layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures is configured as a global pattern Gglob formed by spaced-apart global features arranged with a pitch P approximately equal to said vertical distance h, wherein each of the global features of the global pattern is configured as a building block of a local pattern Gloc of spaced-apart local features arranged with a predefined pitch value P′, at least one pattern parameter of said at least one of the patterned structures being optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range. ### Claim 2 (depends on 1) The sample according to claim 1, wherein said at least one pattern parameter being optimized comprises a value of said pitch P of the global pattern Gglob, while maintaining said predefined pitch value P′. ### Claim 3 (depends on 1) The sample according to claim 1, wherein said at least one patterned structure is located in the top layer of the sample. ### Claim 4 (depends on 1) The sample according to claim 1, wherein said at least one pattern parameter being optimized comprises a duty cycle of the global pattern. ### Claim 5 (depends on 1) The sample of claim 1, being a semiconductor wafer carrying said overlay target. ### Claim 6 (depends on 1) The sample according to claim 1, wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm. ### Claim 7 (depends on 1) The sample according to claim 1, wherein a duty cycle of the first global pattern is about 30%. ### Claim 8 A semiconductor wafer structure comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the wafer structure and one of underneath layers of the wafer structure with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures is configured as a global pattern Gglob formed by spaced-apart global features arranged with a pitch P approximately equal to said vertical distance h, wherein each of the global features of the global pattern is configured as a local pattern Gloc of spaced-apart local features arranged with a predefined pitch value P′, at least a value of said pitch P of the global pattern Gglob being selected for a predetermined optical overlay measurement scheme, requiring to maintain said predefined pitch value P′. ### Claim 9 (depends on 8) The sample according to claim 8, wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm. ### Claim 10 (depends on 8) The sample according to claim 8, wherein a duty cycle of the first global pattern is about 30%. ### Claim 11 A sample comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the sample and one of underneath layers of the sample with a certain vertical distance h between them, wherein at least one of the patterned structures of the pair comprises a first global pattern in the form of spaced-apart global features of the first global pattern which are arranged with a pitch P approximately equal to said vertical distance h and each of said global features of the global pattern is configured as a building block of a second local pattern of spaced-apart local features arranged with a predefined pitch value P′. ### Claim 12 (depends on 11) The sample according to claim 11, wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm. ### Claim 13 (depends on 11) The sample according to claim 11, wherein a duty cycle of the first global pattern is about 30%.