# US 10,311,165 B2 · Guiding patterns optimization for directed self-assembly > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,311,165 B2 - Document ID: US10311165B2 - Status: Granted - Kind: B2 - Application number: 15/084,993 - Filed: 2016-03-30 - Published: 2016-10-06 - Granted: 2019-06-04 - Earliest claimed: 2015-03-30 - Assignees: Mentor Graphics Corporation - Applicants: Mentor Graphics Corporation - Inventors: Junjiang Lei; Le Hong; Yuansheng Ma - Web page: https://patentgrep.com/patent/US10311165B2 ## CPC - G06F 30/337: Design optimisation - G03F 1/00: Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F 1/72: Repair or correction of mask defects - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - G06F 30/00: Computer-aided design [CAD] - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated. ## Claims ### Claim 1 One or more non-transitory computer-readable media storing computer-executable instructions that, when executed cause one or more processors to: construct an initial guiding pattern for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features, wherein the initial guiding pattern is characterized by a plurality of guiding pattern parameters and is for producing the two or more via-type features through directed-self-assembly (DSA); extract predicted values of the location and size parameters for the two or more via-type features from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters for the two or more via-type features; determine a modified guiding pattern by adjusting one or more parameters of the plurality of guiding pattern parameters based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information; and store the modified guiding pattern in an output database, wherein the modified guiding pattern is thereafter used in a chemo-epitaxy manufacturing process or a grapho-epitaxy manufacturing process. ### Claim 2 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the method further comprises: repeating the extracting by replacing the initial guiding pattern with the modified guiding pattern and the determining until one of one or more termination conditions is met. ### Claim 3 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the initial guiding pattern is for producing two via-type features and the plurality of guiding pattern parameters comprise longest length along line connecting the two via-type features, widest width, distance between two inflection points on two inner edges of a neck region and neck width in the middle of the initial guiding pattern or their linear combinations. ### Claim 4 (depends on 3) The one or more non-transitory computer-readable media recited in claim 3, wherein the plurality of guiding pattern parameters further comprises curvatures around corners and a slope at inflection points. ### Claim 5 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the initial guiding pattern is for producing two via-type features and is represented by a polygon and the plurality of guiding pattern parameters comprise relative coordinates of four vertices. ### Claim 6 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the simulations are Monte-Carlo simulations. ### Claim 7 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the correlation information is determined based on comparing the predicted values of the location and size parameters with predicted values of location and size parameters for a guiding pattern obtained by enlarging or reducing the initial guiding pattern uniformly. ### Claim 8 (depends on 1) The one or more non-transitory computer-readable media recited in claim 1, wherein the correlation information comprises a template error enhancement factor (TEEF). ### Claim 9 A method, executed by at least one processor of a computer, comprising: constructing an initial guiding pattern for two or more via-type features in a layout design, by the at least one processor, based on target values of location and size parameters for the two or more via-type features, wherein the initial guiding pattern is characterized by a plurality of guiding pattern parameters and is for producing the two or more via-type features through directed-self-assembly (DSA); extracting predicted values of the location and size parameters for the two or more via-type features, by the at least one processor, from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters for the two or more via-type features; determining a modified guiding pattern by adjusting one or more parameters of the plurality of guiding pattern parameters, by the at least one processor, based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information; and storing the modified guiding pattern in an output database by the at least one processor, wherein the modified guiding pattern is thereafter used in a chemo-epitaxy manufacturing process or a grapho-epitaxy manufacturing process. ### Claim 10 (depends on 9) The method recited in claim 9, further comprising: repeating the extracting by replacing the initial guiding pattern with the modified guiding pattern and the determining until one of one or more termination conditions is met. ### Claim 11 (depends on 9) The method recited in claim 9, wherein the initial guiding pattern is for producing two via-type features and the plurality of guiding pattern parameters comprise longest length along line connecting the two via-type features, widest width, distance between two inflection points on two inner edges of a neck region and neck width in the middle of the initial guiding pattern or their linear combinations. ### Claim 12 (depends on 11) The method recited in claim 11, wherein the plurality of guiding pattern parameters further comprises curvatures around corners and a slope at inflection points. ### Claim 13 (depends on 9) The method recited in claim 9, wherein the initial guiding pattern is for producing two via-type features and is represented by a polygon and the plurality of guiding pattern parameters comprise relative coordinates of four vertices. ### Claim 14 (depends on 9) The method recited in claim 9, wherein the simulations are Monte-Carlo simulations. ### Claim 15 (depends on 9) The method recited in claim 9, wherein the correlation information is determined based on comparing the predicted values of the location and size parameters with predicted values of location and size parameters for a guiding pattern obtained by enlarging or reducing the initial guiding pattern uniformly. ### Claim 16 (depends on 9) The method recited in claim 9, wherein the correlation information comprises a template error enhancement factor (TEEF). ### Claim 17 A system comprising: one or more processors, the one or more processors programmed to perform a method, the method comprising: constructing an initial guiding pattern for two or more via-type features in a layout design, by the one or more processors, based on target values of location and size parameters for the two or more via-type features, wherein the initial guiding pattern is characterized by a plurality of guiding pattern parameters and is for producing the two or more via-type features through directed-self-assembly (DSA); extracting predicted values of the location and size parameters for the two or more via-type features from the initial guiding pattern, by the one or more processors, based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters for the two or more via-type features; determining a modified guiding pattern by adjusting one or more parameters of the plurality of guiding pattern parameters, by the one or more processors, based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information; and storing the modified guiding pattern in an output database by the one or more processors, wherein the modified guiding pattern is thereafter used in a chemo-epitaxy manufacturing process or a grapho-epitaxy manufacturing process. ### Claim 18 (depends on 17) The system recited in claim 17, wherein the method further comprises: repeating the extracting by replacing the initial guiding pattern with the modified guiding pattern and the determining until one of one or more termination conditions is met. ### Claim 19 (depends on 17) The system recited in claim 17, wherein the initial guiding pattern is for producing two via-type features and the plurality of guiding pattern parameters comprise longest length along line connecting the two via-type features, widest width, distance between two inflection points on two inner edges of a neck region and neck width in the middle of the initial guiding pattern or their linear combinations. ### Claim 20 (depends on 17) The system recited in claim 17, wherein the initial guiding pattern is for producing two via-type features and is represented by a polygon and the plurality of guiding pattern parameters comprise relative coordinates of four vertices.