# US 10,310,742 B2 · Memory controller, storage apparatus, information processing system, and method for controlling nonvolatile memory > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,310,742 B2 - Document ID: US10310742B2 - Status: Granted - Kind: B2 - Application number: 15/505,826 - Filed: 2015-07-14 - Published: 2017-09-28 - Granted: 2019-06-04 - Earliest claimed: 2014-09-16 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yasushi Fujinami - Web page: https://patentgrep.com/patent/US10310742B2 ## CPC - G06F 3/0611: {in relation to response time} - G06F 3/0613: {in relation to throughput} - G06F 12/023: {Free address space management} - G06F 12/16: Protection against loss of memory contents {(contains no material, see G06F11/00)} - G11C 13/0033: {Disturbance prevention or evaluation; Refreshing of disturbed memory data} - G11C 13/0064: {Verifying circuits or methods} - G11C 16/3418: {Disturbance prevention or evaluation; Refreshing of disturbed memory data} - G11C 16/3431: {Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step} - G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells} - G11C 2013/0076: {Write operation performed depending on read result} - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract The write reliability of a nonvolatile memory is improved by performing accurate verification of write data. In a memory controller of an information processing system, a determination unit determines whether a state of a memory cell after writing data is stable in a nonvolatile memory including the memory cell having an unstable state period after writing data. A verification unit performs verification by comparing read data which is read from the memory cell where the data is written on the basis of a result of the determination, with write data involved in the writing. A write control unit performs writing of the data and rewriting of the write data based on a result of the verification. ## Claims ### Claim 1 A memory controller comprising: determination circuitry that makes a determination as to whether a state of a memory cell after a writing of first write data is stable in a nonvolatile memory including the memory cell, the memory cell having an unstable state period after the writing of the first write data; verification circuitry that performs verification by comparing read data with second write data involved in the writing of the first write data, the read data being read from the memory cell where the first write data is written; and write control circuitry that performs writing of the first write data and rewriting of the first write data based on a result of the verification, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and when a number of pages of the written data of the plurality of pages is greater than or equal to a number of pages with a stabilized state, the determination circuitry determines that a state of corresponding memory cells is stable upon the verification, and when the number of pages of the written data of the plurality of pages is less than the number of pages with a stabilized state, the determination circuitry waits for a predetermined stabilization time to have elapsed, and then determines that the state of the corresponding memory cells is stable, the number of pages with a stabilized state being a number of pages where a write time is reached, the write time corresponding to the predetermined stabilization time after writing data in the nonvolatile memory. ### Claim 2 (depends on 1) The memory controller according to claim 1, wherein in the nonvolatile memory, when reading is performed immediately after writing the first write data, the first write data is corrupted. ### Claim 3 (depends on 1) The memory controller according to claim 1, wherein in the nonvolatile memory, immediately after writing the first write data, the first write data is not read normally. ### Claim 4 (depends on 1) The memory controller according to claim 1, wherein the determination circuitry makes the determination on the basis of a lapse of predetermined stabilization time after writing the first write data. ### Claim 5 (depends on 1) The memory controller according to claim 1, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and the determination circuitry determines that a state of corresponding memory cells is stable upon the verification. ### Claim 6 (depends on 5) The memory controller according to claim 5, further comprising a rewrite address information holding circuitry that holds rewrite address information, the rewrite address information being information on a page address in the nonvolatile memory where the rewriting is to be performed, wherein the verification circuitry continuously performs the verification after writing the data of a plurality of pages, and allows the rewrite address information holding circuitry to hold rewrite address information based on a result of the verification, and the write control circuitry performs the rewriting on the basis of the held rewrite address information. ### Claim 7 (depends on 5) The memory controller according to claim 5, further comprising a verification address information holding circuitry that holds verification address information, the verification address information being information on a page address in the nonvolatile memory where the verification is to be performed, wherein when the write control circuitry performs the writing and the rewriting, the write control circuitry allows the verification address information holding circuitry to hold, as the verification address information, information on a page address where the writing and the rewriting have been performed, and the verification circuitry performs the verification on the basis of the held verification address information. ### Claim 8 A memory controller comprising: write control circuitry that writes first write data in a nonvolatile memory including a memory cell from second write data, the memory cell having an unstable state period after the writing of the first write data; determination circuitry that makes a determination as to whether a state of the memory cell after writing the first write data is stable; and verification/writing circuitry that performs verification where read data is compared with second write data involved in the writing of the first write data, and performs rewriting of the first write data based on a result of the verification, the read data being read from the memory cell where the first write data is written, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification/writing circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and when a number of pages of the written data of the plurality of pages is greater than or equal to a number of pages with a stabilized state, the determination circuitry determines that a state of corresponding memory cells is stable upon the verification, and when the number of pages of the written data of the plurality of pages is less than the number of pages with a stabilized state, the determination circuitry waits for a predetermined stabilization time to have elapsed, and then determines that the state of the corresponding memory cells is stable, the number of pages with a stabilized state being a number of pages where a write time is reached, the write time corresponding to the predetermined stabilization time after writing data in the nonvolatile memory. ### Claim 9 A storage apparatus comprising: a nonvolatile memory including a memory cell, the memory cell having an unstable state period after a writing of first write data; determination circuitry that makes a determination as to whether a state of the memory cell after the writing of the first write data is stable in the nonvolatile memory; verification circuitry that performs verification by comparing read data with second write data involved in the writing of the first write data, the read data being read from the memory cell where the first write data is written; and write control circuitry that performs writing of the first write data and rewriting of the first write data based on a result of the verification, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and when a number of pages of the written data of the plurality of pages is greater than or equal to a number of pages with a stabilized state, the determination circuitry determines that a state of corresponding memory cells is stable upon the verification, and when the number of pages of the written data of the plurality of pages is less than the number of pages with a stabilized state, the determination circuitry waits for a predetermined stabilization time to have elapsed, and then determines that the state of the corresponding memory cells is stable, the number of pages with a stabilized state being a number of pages where a write time is reached, the write time corresponding to the predetermined stabilization time after writing data in the nonvolatile memory. ### Claim 10 An information processing system comprising: a nonvolatile memory including a memory cell, the memory cell having an unstable state period after a writing of first write data; a memory controller that controls the nonvolatile memory; and a host computer that accesses the nonvolatile memory through the memory controller, wherein the memory controller includes: determination circuitry that makes a determination as to whether a state of the memory cell after the writing of the first write data is stable in the nonvolatile memory; verification circuitry that performs verification by comparing read data with second write data involved in the writing of the first write data, the read data being read from the memory cell where the first write data is written; and write control circuitry that performs writing of the first write data and rewriting of the first write data based on a result of the comparison, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and when a number of pages of the written data of the plurality of pages is greater than or equal to a number of pages with a stabilized state, the determination circuitry determines that a state of corresponding memory cells is stable upon the verification, and when the number of pages of the written data of the plurality of pages is less than the number of pages with a stabilized state, the determination circuitry waits for a predetermined stabilization time to have elapsed, and then determines that the state of the corresponding memory cells is stable, the number of pages with a stabilized state being a number of pages where a write time is reached, the write time corresponding to the predetermined stabilization time after writing data in the nonvolatile memory. ### Claim 11 A method for controlling a nonvolatile memory, the method comprising: a determining step of making a determination as to whether a state of a memory cell after a writing of first write data is stable in the nonvolatile memory including the memory cell by a determination circuitry, the memory cell having an unstable state period after the writing of the first write data; a verifying step of performing verification by comparing read data with second write data involved in the writing of the first write data by a verification circuitry, the read data being read from the memory cell where the first write data is written; and a write controlling step of performing writing of the first write data and rewriting of the first write data based on a result of the comparison by a write control circuitry, wherein the nonvolatile memory is accessed on a page-by-page basis, using a page address, the write control circuitry continuously writes data of a plurality of pages, the verification circuitry performs the verification on a page-by-page basis in order in which the data of the plurality of pages is written, and when a number of pages of the written data of the plurality of pages is greater than or equal to a number of pages with a stabilized state, the determination circuitry determines that the state of corresponding memory cells is stable upon the verification, and when the number of pages of the written data of the plurality of pages is less than the number of pages with a stabilized state, the determination circuitry waits for a predetermined stabilization time to have elapsed, and then determines that the state of the corresponding memory cells is stable, the number of pages with a stabilized state being a number of pages where a write time is reached, the write time corresponding to the predetermined stabilization time after writing data in the nonvolatile memory.