# US 10,310,394 B2 · Lithographic apparatus, a projection system and a device manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,310,394 B2 - Document ID: US10310394B2 - Status: Granted - Kind: B2 - Application number: 15/289,118 - Filed: 2016-10-07 - Published: 2017-04-06 - Granted: 2019-06-04 - Earliest claimed: 2007-11-30 - Assignees: ASML Netherlands B.V. - Applicants: Asml Netherlands B.V. - Inventors: Yuri Johannes Gabriel Van De Vijver; Johannes Hubertus Josephina Moors; Wendelin Johanna Maria Versteeg; Peter Gerardus Jonkers - Web page: https://patentgrep.com/patent/US10310394B2 ## CPC - G03F 7/70933: {Purge, e.g. exchanging fluid or gas to remove pollutants} - G03F 7/70841: {Constructional issues related to vacuum environment, e.g. load-lock chamber} - G03F 7/70866: {of mask or workpiece} - G03F 7/70883: {of optical system} - G03F 7/70916: {Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A lithographic apparatus is disclosed that includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate, a vacuum chamber through which the patterned beam of radiation is projected during use, and a purge system configured to provide a purge gas flow in the chamber. ## Claims ### Claim 1 A lithographic apparatus comprising: an illumination system constructed and arranged to condition a radiation beam; a support constructed and arranged to support a patterning device, the patterning device being adapted to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed and arranged to hold a substrate; a substrate handler constructed and arranged to move the substrate along a substrate exchange path; a projection system constructed and arranged to project the patterned radiation beam onto a target portion of the substrate; a vacuum chamber containing the substrate table and positioned outside the projection system such that the patterned beam of radiation is received from the projection system and projected therethrough during use, and a purge system constructed and arranged to provide a purge gas flow in the vacuum chamber at a purge gas flow speed of more than 10 m/s, wherein the purge system includes a purge inlet located in the vacuum chamber and outside the projection system and configured to supply the purge gas flow in the vacuum chamber, a first pump located on a first side of the chamber and configured and arranged to receive a first portion of the purge gas flow and to remove contamination particles before the contamination particles can cross the substrate exchange path, and a second pump located on a second side of the vacuum chamber opposite the first side such that a portion of the chamber through which the patterned beam of radiation is projected is disposed between the first and second pumps, the second pump being configured and arranged to receive a respective second portion of the purge gas flow. ### Claim 2 (depends on 1) The lithographic apparatus according to claim 1, wherein the purge inlet is arranged near a region that is critical for contamination particles. ### Claim 3 (depends on 1) The lithographic apparatus according to claim 1, wherein the first and second pumps are disposed at opposed side walls of the chamber. ### Claim 4 (depends on 1) The lithographic apparatus according to claim 1, wherein the pump is located near a contamination particle source. ### Claim 5 (depends on 1) The lithographic apparatus according to claim 1, wherein the purge system is constructed to provide a purge gas from a section in a region of the chamber that is traversed by the patterned beam of radiation, towards the outside of the patterned beam of radiation. ### Claim 6 (depends on 1) The lithographic apparatus according to claim 1, wherein the purge system is constructed to provide a hydrogen purge gas. ### Claim 7 (depends on 1) The lithographic apparatus according to claim 1, wherein the purge system is constructed to provide a halogen purge gas. ### Claim 8 (depends on 1) The lithographic apparatus according to claim 1, wherein the purge gas flow path is provided at a separation from a surface of the substrate of at least two times an average diffusion length of contamination particles. ### Claim 9 (depends on 1) The lithographic apparatus according to claim 1, wherein a temperature of the purge gas flow is lower than a temperature of a surface of an optical device along which the purge gas flow is applied such that thermophoretic forces push contamination particles away from the surface of the optical device. ### Claim 10 (depends on 1) The lithographic apparatus of claim 1, wherein the purge gas flow is a laminar flow. ### Claim 11 (depends on 1) The lithographic apparatus of claim 1, wherein the purge gas flow is along a surface of the substrate. ### Claim 12 A device manufacturing method comprising: projecting a patterned beam of radiation onto a substrate; moving the substrate along a substrate exchange path using a substrate handler; providing a purge gas flow at a purge gas flow speed of more than 10 m/s via a purge inlet located in a vacuum chamber containing a substrate table for holding a substrate and which is positioned outside a projection system of a lithographic apparatus to receive the patterned beam from the projection system and through which the patterned beam of radiation is projected; receiving the purge gas flow on opposed first and second sides of a portion of the vacuum chamber being traversed by the patterned beam of radiation using respective first and second pumps each disposed on a respective one of the first and second sides, wherein a path between a purge gas inlet and the second pump crosses the substrate exchange path; and receiving, with the first pump, a portion of the purge gas flow to remove contamination particles before the contamination particles can cross the substrate exchange path; and receiving, with the second pump, a portion of the purge gas flow before the purge gas flow can cross the patterned beam of radiation. ### Claim 13 (depends on 12) The device manufacturing method of claim 12, wherein the purge gas flow is a laminar flow. ### Claim 14 (depends on 12) The device manufacturing method of claim 12, wherein the purge gas flow is along a surface of the substrate.