# US 10,310,389 B2 · Method of measuring, device manufacturing method, metrology apparatus, and lithographic system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,310,389 B2 - Document ID: US10310389B2 - Status: Granted - Kind: B2 - Application number: 15/942,423 - Filed: 2018-03-30 - Published: 2018-10-18 - Granted: 2019-06-04 - Earliest claimed: 2017-04-14 - Assignees: ASML Netherlands B.V. - Applicants: Asml Netherlands B.V. - Inventors: Nitesh Pandey; Jin Lian; Samee Ur Rehman; Martin Jacobus Johan Jak - Web page: https://patentgrep.com/patent/US10310389B2 ## CPC - G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching} - G01B 11/02: for measuring length, width or thickness (G01B11/08 takes precedence) - G03F 7/70566: {Polarisation control} - G03F 7/70575: {Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength} - G03F 7/70583: {Speckle reduction, e.g. coherence control or amplitude/wavefront splitting} - G03F 7/70616: {Monitoring the printed patterns} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ## Abstract Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure. ## Claims ### Claim 1 A method of measuring a plurality of structures formed on a substrate, the method comprising: obtaining data from a first measurement process, the first measurement process comprising individually measuring each of the plurality of structures to measure a first property of the structure; and using a second measurement process to measure a second property of each of the plurality of structures, the second measurement process comprising illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure. ### Claim 2 (depends on 1) The method of claim 1, wherein the individual selection of the radiation property for the second measurement process is performed for each structure based on a previously measured correlation between the first property and a choice of the radiation property for the second measurement process that enables a performance of the second measurement process to be higher than for other choices of the radiation property for the second measurement process. ### Claim 3 (depends on 1) The method of claim 1, wherein the first property of the structure comprises reflectivity. ### Claim 4 (depends on 1) The method of claim 1, wherein the first property of the structure comprises an effect of the structure on the polarization of radiation scattered from the structure. ### Claim 5 (depends on 1) The method of claim 1, wherein the second property of each structure comprises overlay between different layers of the structure. ### Claim 6 (depends on 1) The method of claim 1, wherein the radiation property for the second measurement process comprises a spectral distribution of intensity. ### Claim 7 (depends on 6) The method of claim 6, wherein the spectral distribution of intensity comprises central wavelength and/or bandwidth. ### Claim 8 (depends on 1) The method of claim 1, wherein the radiation property for the second measurement process comprises a polarization of the radiation. ### Claim 9 (depends on 1) The method of claim 1, wherein: the first measurement process uses a first radiation source to illuminate each structure with radiation; and the second measurement process uses a second radiation source to illuminate each structure with radiation, wherein the first radiation source is different from the second radiation source. ### Claim 10 (depends on 1) The method of claim 1, wherein the first measurement process uses the output from a focus sensor configured to measure a focus of an optical system used for the second measurement process. ### Claim 11 (depends on 10) The method of claim 10, wherein the first property of the structure comprises reflectivity and the signal strength from the focus sensor is used to determine the reflectivity. ### Claim 12 (depends on 1) The method of claim 1, wherein the first measurement process uses one or more optical elements that are also used when measuring a focus of an optical system used for the second measurement process, wherein the one or more optical elements are not used when performing the second measurement process. ### Claim 13 (depends on 1) The method of claim 1, wherein the first measurement process uses a first radiation source to illuminate each structure with broadband radiation and the individual selection of the radiation property for the second measurement process is performed for each structure based on a spectroscopic analysis of the data from the first measurement process. ### Claim 14 (depends on 1) The method of claim 1, comprising performing the first measurement process. ### Claim 15 (depends on 1) The method of claim 1, wherein the plurality of structures formed on the substrate are formed by a lithographic process. ### Claim 16 A metrology apparatus for measuring a plurality of structures on a substrate, the metrology apparatus comprising: a first measurement system configured to perform a first measurement process, the first measurement process comprising individually measuring each of the plurality of structures to measure a first property of the structure; a second measurement system configured to perform a second measurement process, the second measurement process comprising measuring a second property of each of the plurality of structures; and a control system configured to control the second measurement process such that a radiation property of radiation used to illuminate each structure during the second measurement process is individually selected for that structure using the measured first property for the structure. ### Claim 17 (depends on 16) The apparatus of claim 16, wherein the control system is configured to perform the individual selection of the radiation property for the second measurement process for each structure based on a previously measured correlation between the first property and a choice of the radiation property for the second measurement process that enables a performance of the second measurement process to be higher than for other choices of the radiation property for the second measurement process. ### Claim 18 (depends on 16) The apparatus of claim 16, wherein the first property of the structure comprises reflectivity or an effect of the structure on the polarization of radiation scattered from the structure. ### Claim 19 (depends on 16) The apparatus of claim 16, wherein the second property of each structure comprises overlay between different layers of the structure. ### Claim 20 A non-transitory computer-readable medium comprising instructions, when executed, configured to cause a computer system to at least: obtain data from a first measurement process, the first measurement process comprising individually measuring each of a plurality of structures formed on a substrate to measure a first property of the structure; and cause use of a second measurement process to measure a second property of each of the plurality of structures, the second measurement process comprising illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.