# US 10,310,379 B2 · Multiple patterning approach using ion implantation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,310,379 B2 - Document ID: US10310379B2 - Status: Granted - Kind: B2 - Application number: 15/458,413 - Filed: 2017-03-14 - Published: 2018-07-19 - Granted: 2019-06-04 - Earliest claimed: 2017-01-13 - Assignees: Varian Semiconductor Equipment Associates, Inc. - Applicants: Varian Semiconductor Equipment Associates, Inc. - Inventors: Tristan Y. Ma; Maureen K. Petterson; John Hautala; Steven R. Sherman - Web page: https://patentgrep.com/patent/US10310379B2 ## CPC - G03F 7/40: Treatment after imagewise removal, e.g. baking - H10P 14/61: using masks - H10P 30/22: using masks - H10P 50/283: {by chemical means} - H10P 50/73: {using masks for insulating materials} - H10P 76/204: {of organic photoresist masks} - H10P 76/2041: {Photolithographic processes} - H10P 76/2049: {Ion beam lithography processes} - H10P 76/4085: {characterised by the processes involved to create the masks} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C. The method may include directing a first ion species into the photoresist patterning feature during a first exposure; and depositing a sidewall layer on the patterning feature after the directing at a deposition temperature, the deposition temperature being 200° C. or greater. ## Claims ### Claim 1 A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C.; directing ions into the photoresist patterning feature during a first exposure; and after the directing the ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater, wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer. ### Claim 2 (depends on 1) The method of claim 1, wherein the photoresist patterning feature comprises a first carbon concentration before the directing the ions, wherein the photoresist patterning feature comprises a second carbon concentration after the directing the ions, wherein the second carbon concentration is greater than the first carbon concentration. ### Claim 3 (depends on 1) The method of claim 1, wherein the photoresist patterning feature comprises an oxygen-containing polymer, wherein the photoresist patterning feature comprises a first oxygen concentration before the first exposure, wherein the photoresist patterning feature comprises a second oxygen concentration after the first exposure, wherein the second oxygen concentration is less than the first oxygen concentration. ### Claim 4 (depends on 1) The method of claim 1, wherein the photoresist patterning feature comprises a first bulk density before the first exposure, wherein the photoresist patterning feature comprises a second bulk density after the first exposure, wherein the second bulk density is greater than the first bulk density. ### Claim 5 (depends on 1) The method of claim 1 wherein the ions comprise a silicon-containing ion species, hydrogen, helium, argon, carbon, nitrogen, or xenon. ### Claim 6 (depends on 1) The method of claim 1, wherein the ions generate a ratio of carbon to oxygen in the photoresist patterning feature of greater than 4:1. ### Claim 7 (depends on 1) The method of claim 1, the photoresist patterning feature having a first feature width before the first exposure, and having a second feature width after the first exposure, wherein the second feature width is less than the first feature width. ### Claim 8 (depends on 1) The method of claim 1, wherein the directing the ions comprises directing a first ion species, wherein the first ion species comprises hydrogen ions, silicon ions, or argon ions, the method further comprising directing a second ion species in a second exposure to the photoresist patterning feature, wherein the second ion species comprise argon ions, silicon ions, carbon ions, krypton ions, xenon, ions or germanium ions. ### Claim 9 (depends on 8) The method of claim 8, wherein the first ion species and the second ion species are directed at an ion trajectory forming a non-zero angle of incidence θ with respect to a perpendicular to the substrate plane, wherein θ is between 10 degrees and 60 degrees. ### Claim 10 (depends on 8) The method of claim 8, wherein the first exposure comprises an ion dose of 1E14/cm2 to 2E16/cm2 and an ion energy of 0.5 keV-20 keV. ### Claim 11 (depends on 8) The method of claim 8, wherein the second exposure comprises a total ion dose of 4E14/cm2 to 3E16/cm2 and an ion energy of 0.5 keV-3 keV. ### Claim 12 (depends on 1) The method of claim 1, wherein the first exposure comprises a plurality of sub-exposures, wherein a sub-exposure of the plurality of sub-exposures comprises: directing the ions at a first ion trajectory forming a non-zero angle of incidence θ with respect to a perpendicular to the substrate plane, and rotating the substrate through 180 degrees about the perpendicular, wherein the sub-exposure comprises an ion dose of 5E13/cm2 to 5E14/cm2. ### Claim 13 (depends on 1) The method of claim 1, wherein the deposition temperature is 300° C. to 350° C. ### Claim 14 (depends on 1) The method of claim 1, further comprising: etching a portion of the sidewall layer, wherein the photoresist patterning feature is exposed; and selectively removing the photoresist patterning feature, wherein a plurality of sidewall patterning features are formed. ### Claim 15 A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the photoresist patterning feature having a first critical dimension (CD) and having a first carbon concentration; directing first ions to the photoresist patterning feature, wherein after the directing the first ions the photoresist patterning feature attains a second CD, less than the first CD; directing second ions to the photoresist patterning feature, wherein after the directing the second ions the photoresist patterning feature has a second carbon concentration, wherein the second carbon concentration is greater than the first carbon concentration; and after the directing the first ions and the second ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater, wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer. ### Claim 16 (depends on 15) The method of claim 15, wherein before the directing the first ions and the second ions, the photoresist patterning feature having a softening temperature below 200° C., and wherein after the directing the first ions and the second ions, the photoresist patterning feature is thermally stable to 300° C. or higher. ### Claim 17 (depends on 15) The method of claim 15, further comprising: etching a portion of the sidewall layer to expose the photoresist patterning feature; and selectively removing the photoresist patterning feature, wherein plurality of sidewall patterning features are formed. ### Claim 18 A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the photoresist patterning feature having a first critical dimension (CD) and comprising an oxygen-containing polymer having a first oxygen concentration; directing first ions to the photoresist patterning feature, wherein after the directing the first ions the photoresist patterning feature attains a second CD, less than the first CD; directing second ions to the photoresist patterning feature, wherein after the directing the second ions the photoresist patterning feature has a second oxygen concentration, wherein the second oxygen concentration is less than the first oxygen concentration; and after the directing the first ions and the second ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer.