# US 10,310,060 B2 · High-speed light sensing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,310,060 B2 - Document ID: US10310060B2 - Status: Granted - Kind: B2 - Application number: 16/153,631 - Filed: 2018-10-05 - Published: 2019-02-14 - Granted: 2019-06-04 - Earliest claimed: 2015-11-06 - Assignees: Artilux, Inc. - Applicants: Artilux Corporation; Artilux Inc. - Inventors: Yun-Chung Na; Che-Fu Liang - Web page: https://patentgrep.com/patent/US10310060B2 ## CPC - G01S 7/4863: Detector arrays, e.g. charge-transfer gates - G01S 17/10: using transmission of interrupted, pulse-modulated waves (determination of distance by phase measurements G01S17/32) - G01S 17/894: Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar - H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe - H10F 30/2218: {the devices comprising active layers made of only Group IV-VI materials} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8067: {Reflectors} - G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. ## Claims ### Claim 1 A time-of-flight system, comprising: a light source for generating photons; and an image sensor comprising multiple pixels supported by a semiconductor substrate, wherein each pixel comprises: an absorption layer supported by the semiconductor substrate having a different material composition from the absorption layer, the absorption layer comprising a photodetection region configured to absorb the photons and to generate photo-carriers in response to the absorbed photons; one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a first portion of the photo-carriers based on the first control signal; and one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a second portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal, and wherein the first portion of the photo-carriers and the second portion of the photo-carriers are of a same type of carriers. ### Claim 2 (depends on 1) The time-of-flight system of claim 1, wherein the absorption layer comprises a germanium-silicon layer. ### Claim 3 (depends on 1) The time-of-flight system of claim 1, wherein the semiconductor substrate comprises a silicon substrate. ### Claim 4 (depends on 1) The time-of-flight system of claim 1, wherein the light source is configured, during operation, to emit optical pulses having a duty cycle less than 50%, wherein, during operation, the one or more first switches receive electrical pulses from the first control signal having a demodulation duty cycle that is the same as the duty cycle of the optical pulses, and wherein, during operation, the one or more second switches receive electrical pulses from the second control signal having a demodulation duty cycle that is a reverse of the duty cycle of the optical pulses. ### Claim 5 (depends on 4) The time-of-flight system of claim 4, wherein the light source is configured so that, during operation, an energy of each of the optical pulses is the same. ### Claim 6 (depends on 1) The time-of-flight system of claim 1, wherein the photons generated by the light source have a wavelength at which the semiconductor substrate is transparent. ### Claim 7 (depends on 1) The time-of-flight system of claim 1, wherein the photons generated by the light source have a wavelength at which the absorption layer has a substantial quantum efficiency and the semiconductor substrate allows no or partial absorption of the photons. ### Claim 8 An optical apparatus comprising: an absorption layer comprising a photodetection region configured to absorb photons and to generate photo-carriers in response to the absorbed photons; one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a first portion of the photo-carriers based on the first control signal; and one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a second portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal, and wherein the first portion of the photo-carriers and the second portion of the photo-carriers are of a same type of carriers, wherein the one or more first switches each comprise: a first well region having a first polarity; a first doped region having a second polarity opposite to the first polarity, at least a portion of the first doped region having the second polarity being formed in the first well region having the first polarity, and the first doped region having the second polarity being controlled by the first control signal; and a second doped region having the first polarity coupled to a first readout integrated circuit; and wherein the one or more second switches each comprise: a second well region having the first polarity; a third doped region having the second polarity, at least a portion of the third doped region being formed in the second well region, and the third doped region being controlled by the second control signal; and a fourth doped region having the first polarity coupled to a second readout integrated circuit. ### Claim 9 (depends on 8) The optical apparatus of claim 8, wherein the first well region having the first polarity overlaps with the second well region having the first polarity. ### Claim 10 (depends on 8) The optical apparatus of claim 8, wherein the absorption layer comprises both the first well region having the first polarity and the second well region having the first polarity. ### Claim 11 (depends on 8) The optical apparatus of claim 8, wherein the absorption layer comprises both the first doped region having the second polarity and the second doped region having the second polarity. ### Claim 12 (depends on 8) The optical apparatus of claim 8, wherein the first polarity is negative and the second polarity is positive. ### Claim 13 (depends on 8) The optical apparatus of claim 8, wherein the first polarity is positive and the second polarity is negative. ### Claim 14 A three-dimensional imaging system, comprising: a transmitter unit comprising a light source for generating photons and directing the photons to a three-dimensional object; and a receiver unit comprising an image sensor, the image sensor comprising multiple pixels supported by a silicon substrate, each pixel comprising an absorption layer having a different composition from the silicon substrate, the absorption layer comprising a photodetection region configured to absorb photons reflected from the three-dimensional object and to generate photo-carriers in response to the absorbed photons, wherein each of the multiple pixels is configured so that at least some of the photons reflected from the three-dimensional object are transmitted through the silicon substrate into the photodetection region of the absorption layer, wherein the absorption layer substantially absorbs photons in the near infrared (NIR) region for photodetection and the silicon substrate substantially absorbs photons in a shorter wavelength region compared to the NIR region for optical filtering. ### Claim 15 (depends on 14) The three-dimensional imaging system of claim 14, wherein the light source generates photons having a wavelength for which the silicon substrate does not or partially absorbs the photons. ### Claim 16 (depends on 14) The three-dimensional imaging system of claim 14, wherein the light source comprises an LED or a laser. ### Claim 17 (depends on 14) The three-dimensional imaging system of claim 14, further comprising a processing unit configured to process the photo-carriers generated by the receiver unit and determines characteristics of the object. ### Claim 18 (depends on 17) The three-dimensional imaging system of claim 17, wherein the characteristics of the object are selected from the group consisting of depth information and material composition information.