# US 10,309,005 B2 · Deposition device and deposition method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,309,005 B2 - Document ID: US10309005B2 - Status: Granted - Kind: B2 - Application number: 15/032,688 - Filed: 2014-08-28 - Published: 2016-09-01 - Granted: 2019-06-04 - Earliest claimed: 2013-10-30 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yasuhiko Kojima; Hiroshi Sone; Atsushi Gomi; Kanto Nakamura; Toru Kitada; Yasunobu Suzuki; Yusuke Suzuki; Koichi Takatsuki; Tatsuo Hirasawa; Keisuke Sato; Chiaki Yasumuro; Atsushi Shimada - Web page: https://patentgrep.com/patent/US10309005B2 ## CPC - C23C 14/0036: {Reactive sputtering} - C23C 14/0063: {characterised by means for introducing or removing gases} - C23C 14/081: {of aluminium, magnesium or beryllium} - C23C 14/165: {by cathodic sputtering} - C23C 14/352: {using more than one target (C23C14/56 takes precedence)} - H01J 37/3244: {Gas supply means} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/3405: {Magnetron sputtering} - H01J 37/3426: {Material} - H10N 50/01: Manufacture or treatment - H10N 50/10: Magnetoresistive devices - H10N 50/85: Materials of the active region - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region. ## Claims ### Claim 1 A deposition device comprising: a processing container; an exhaust device configured to depressurize an internal pressure of the processing container; a mounting table, having a disc shape, installed inside the processing container and configured to mount a target object thereon; a metal target installed above the mounting table; a first gas supply part configured to supply a gas into the processing container; a power supply configured to generate power such that positive ions in the gas supplied from the first gas supply part collide against the metal target; a second gas supply part configured to supply an oxidizing gas; a head, having a disc shape, connected to the second gas supply part, including a plurality of gas injection ports arranged to open downward toward the mounting table, and configured to inject the oxidizing gas toward the mounting table, the head overlapping with an entire surface of the mounting table; and a head driving mechanism configured to move the head between a first region that is defined between the metal target and a mounting region where the target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region, wherein the head driving mechanism places the head in the second region while a metal emitted from the metal target is deposited on the target object, and places the head in the first region while the oxidizing gas is injected toward the mounting table. ### Claim 2 (depends on 1) The deposition device of claim 1, further comprising a heater installed in the head. ### Claim 3 (depends on 1) The deposition device of claim 1, further comprising a heating mechanism configured to heat the oxidizing gas supplied into the head, wherein the heating mechanism is installed outside the processing container. ### Claim 4 (depends on 2) The deposition device of claim 2, wherein a temperature of the oxidizing gas is adjusted to a temperature ranging from 50 degrees C. or more to 300 degrees C. or less. ### Claim 5 (depends on 1) The deposition device of claim 1, further comprising: a heater installed in the mounting table; and a mounting table driving mechanism configured to rotate the mounting table about a first axis line which vertically extends along a central axis line of the mounting table, wherein the head driving mechanism pivotably supports the head about a second axis line which vertically extends at a lateral side of the mounting table. ### Claim 6 (depends on 5) The deposition device of claim 5, wherein a temperature of the mounting table is adjusted to a temperature ranging from 60 degrees C. or more to 200 degrees C. or less. ### Claim 7 (depends on 1) The deposition device of claim 1, wherein the head has a planar size larger than that of the mounting region. ### Claim 8 (depends on 7) The deposition device of claim 7, further comprising a target made of an active metal installed above the mounting table. ### Claim 9 (depends on 8) The deposition device of claim 8, wherein the active metal is Ti or Ta. ### Claim 10 (depends on 1) The deposition device of claim 1, wherein the metal target is an Mg target. ### Claim 11 (depends on 1) A deposition method using the deposition device of claim 1, the deposition method comprising: depositing a metal emitted from the metal target onto the target object, in a state where the head is placed in the second region; and injecting the oxidizing gas from the head toward the target object to oxidize the metal deposited on the target object, in a state where the head is placed in the first region, wherein the step of depositing and the step of injecting are alternately repeated. ### Claim 12 (depends on 11) The deposition method of claim 11, wherein the deposition device further comprises a heater installed in the head, and wherein, in the step of oxidizing the metal, the deposited metal is oxidized by the oxidizing gas heated in the head. ### Claim 13 (depends on 11) The deposition method of claim 11, wherein the deposition device further comprises a heating mechanism installed outside the processing container and configured to heat the oxidizing gas supplied into the head, and wherein, in the step of oxidizing the metal, the deposited metal is oxidized by the oxidizing gas heated by the heating mechanism. ### Claim 14 (depends on 11) The deposition method of claim 11, wherein the deposition device further comprises: a heater installed in the mounting table; and a mounting table driving mechanism configured to rotate the mounting table about a first axis line which vertically extends along a central axis line of the mounting table, wherein the head driving mechanism pivotably supports the head about a second axis line which vertically extends at a lateral side of the mounting table, wherein a plurality of gas injection ports arranged in a direction perpendicular to the second axis line is formed in the head, and wherein, in the step of oxidizing the metal, the head is moved about the second axis line above the mounting table. ### Claim 15 (depends on 11) The deposition method of claim 11, wherein the head has a planar size larger than that of the mounting region. ### Claim 16 (depends on 15) The deposition method of claim 15, further comprising, before the step of depositing the metal, the step of causing positive ions to collide against the metal target in the state where the head is placed in the first region. ### Claim 17 (depends on 15) The deposition method of claim 15, wherein the deposition device further comprises a target made of an active metal installed above the mounting table, and wherein the deposition method further comprises, before the step of depositing the metal, the step of causing the positive ions to collide against the target made of the active metal in the state where the head is placed in the first region. ### Claim 18 (depends on 17) The deposition method of claim 17, wherein the active metal is Ti or Ta. ### Claim 19 (depends on 11) The deposition method of claim 11, wherein the metal target is an Mg target.