# US 10,309,003 B2 · Honeycomb structure, and manufacturing method of the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,309,003 B2 - Document ID: US10309003B2 - Status: Granted - Kind: B2 - Application number: 15/454,078 - Filed: 2017-03-09 - Published: 2017-10-05 - Granted: 2019-06-04 - Earliest claimed: 2016-03-29 - Assignees: NGK Insulators, Ltd. - Applicants: Ngk Insulators, Ltd. - Inventors: Shiho Matsui; Takayuki Inoue; Kouhei Yamada - Web page: https://patentgrep.com/patent/US10309003B2 ## CPC - C23C 4/12: characterised by the method of spraying - C23C 4/04: characterised by the coating material - C23C 4/10: Oxides, borides, carbides, nitrides or silicides; Mixtures thereof - H05B 3/12: characterised by the composition or nature of the conductive material - H05B 2203/024: Heaters using beehive flow through structures - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL ## Abstract The honeycomb structure includes a pillar-shaped honeycomb structure body having porous partition walls 1 defining a plurality of cells and a circumferential wall, and a pair of electrode members disposed on the side of a side surface of the honeycomb structure body. The pair of electrode members contain metal silicon and boron, at least a part of the electrode member is made of a composite material including, as a main component, silicon containing 100 to 10000 ppm of boron in silicon. In the composite material which is comprised the electrode member, a volume ratio of the silicon containing 100 to 10000 ppm of the boron in the composite material is 70 volume % or more. An electric resistivity of the electrode member made of the composite material is from 20 μΩcm to 0.1 Ωcm. ## Claims ### Claim 1 A honeycomb structure comprising: a pillar-shaped honeycomb structure body; and a pair of electrode members disposed on the side of a side face of the honeycomb structure body, wherein the honeycomb structure body has porous partition walls and a circumferential wall disposed at an outermost circumference, in the honeycomb structure body, the partition walls define a plurality of cells extending from a first end face of the honeycomb structure body to a second end face thereof, the honeycomb structure body is made of a material containing silicon carbide, and the pair of electrode members contains silicon and boron, at least a part of each electrode member is made of a composite material including silicon containing 100 to 10000 ppm of boron in silicon, as a main component, and at least one of a metal boride and a boride, in the composite material, a volume ratio of the silicon containing 100 to 10000 ppm of the boron in the composite material is 70 volume % or more, and an electric resistivity of the electrode members made of the composite material is from 20 μΩcm to 0.1 Ωcm. ### Claim 2 (depends on 1) The honeycomb structure according to claim 1, wherein the electric resistivity of the electrode member is from 0.001 to 0.1 Ωcm after a heat treatment is performed at 1000° C. of an atmospheric temperature for 72 hours. ### Claim 3 (depends on 1) The honeycomb structure according to claim 1, wherein a thermal expansion coefficient of the electrode member is from 3.0 to 6.5×10−6/K. ### Claim 4 (depends on 1) The honeycomb structure according to claim 1, wherein the metal boride is at least one selected from the group consisting of CrB, CrB2, ZrB2, TaB2, NbB2, WB, and MoB. ### Claim 5 (depends on 1) The honeycomb structure according to claim 1, wherein the boride is at least one of BN and B4C. ### Claim 6 (depends on 1) The honeycomb structure according to claim 1, further comprising: a conductive intermediate layer made of a material containing at least one of silicon carbide and metal silicon between the side face of the honeycomb structure body and the electrode member. ### Claim 7 (depends on 6) The honeycomb structure according to claim 6, wherein an electric resistivity of the conductive intermediate layer is from 20 μΩcm to 5 Ωcm. ### Claim 8 (depends on 1) The honeycomb structure according to claim 1, wherein in the honeycomb structure body, a porosity is from 30 to 60%, an average pore diameter is from 2 to 15 μm, a thickness of the partition walls is from 50 to 300 μm, a cell density is from 40 to 150 cells/cm2, and an electric resistance between the pair of electrode members is from 0.1 to 100Ω. ### Claim 9 (depends on 1) A manufacturing method of a honeycomb structure according to claim 1, comprising: a step of thermally spraying or applying an electrode member forming raw material to the side of a side face of a pillar-shaped honeycomb formed body or a honeycomb fired body obtained by firing the honeycomb formed body to form electrode members on the side of the side face of the honeycomb formed body or the honeycomb fired body, wherein a mixture including solid silicon and powder of at least one of a metal boride and a boride is used as the electrode member forming raw material, and the mixture is thermally sprayed, or the applied mixture is heated at a temperature of 1400° C. or more to melt silicon in the mixture, thereby to form the electrode members. ### Claim 10 (depends on 2) The honeycomb structure according to claim 2, wherein a thermal expansion coefficient of the electrode member is from 3.0 to 6.5×10−6/K.