# US 10,308,814 B2 · Coating composition, method for producing same and use thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,308,814 B2 - Document ID: US10308814B2 - Status: Granted - Kind: B2 - Application number: 15/118,472 - Filed: 2015-02-09 - Published: 2017-06-22 - Granted: 2019-06-04 - Earliest claimed: 2014-02-14 - Assignees: Evonik Degussa GmbH - Applicants: Evonik Degussa GmbH - Inventors: Duy Vu Pham; Dennis Weber; Felix Jaehnike - Web page: https://patentgrep.com/patent/US10308814B2 ## CPC - C09D 1/00: Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances - C09D 5/00: Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced {(electrically insulating plastics, resins or waxes H01B3/30)}; Filling pastes - C09D 7/20: Diluents or solvents - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 62/80: characterised by the materials - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10P 14/38: {characterised by treatments done after the formation of the materials} - H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating} - H10P 14/668: {the materials being characterised by the deposition precursor materials} - H10P 14/69396: {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium} - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention relates to a coating composition producible from at least one yttrium-containing precursor, a solvent A, and a solvent B, which is different from the solvent A, the ratio of the vapor pressure of the solvent A at 20° C. to the vapor pressure of solvent B at 20° C. being p A p B ≥ 10 , to methods for producing it, and to its use. ## Claims ### Claim 1 A coating composition that can be produced by mixing: a) at least one yttrium-containing precursor; b) a solvent A; and c) a solvent B, which is different from solvent A, wherein the ratio of the vapour pressure of solvent A at 20° C. to the vapour pressure of solvent B at 20° C. is: p A p B ≥ 10 and wherein: a) the at least one yttrium-containing precursor comprises a yttrium oxoalkoxide; b) the coating composition does not comprise water as a solvent; and c) the only metal or semimetal present in precursors is yttrium. ### Claim 2 (depends on 1) The coating composition of claim 1, wherein the at least one yttrium-containing precursor is further comprises one or more compounds selected from the group consisting of: yttrium alkoxides; yttrium alkoxyalkoxides; and yttrium salts. ### Claim 3 (depends on 1) The coating composition of claim 1, wherein the water content in the coating composition (including water absorbed from the atmosphere) is not more than 500 ppm and the coating composition is free of additives. ### Claim 4 (depends on 1) The coating composition of claim 1, wherein the at least one yttrium-containing precursor is Y5O(O-iPr)13. ### Claim 5 (depends on 1) The coating composition of claim 1, wherein the fraction of all yttrium-containing precursors used is 0.1 to 10 wt %, based on the total mass of the formulation. ### Claim 6 (depends on 1) The coating composition of claim 1, wherein the solvents are selected from the group consisting of: alcohols; alkoxy alcohols; hydroxy ethers; carboxylic esters and lactic esters. ### Claim 7 (depends on 1) The coating composition of claim 1, wherein the difference in the boiling points of the two solvents A and B under SATP conditions is ≥30° C. ### Claim 8 (depends on 1) The coating composition of claim 1, wherein the boiling point of solvent A under SATP conditions is 50 to 140° C. ### Claim 9 (depends on 8) The coating composition of claim 8, wherein solvent A is selected from the group consisting of: 1-methoxy-2-propanol; 2-methoxyethanol; butyl acetate; isopropanol; tert-butanol; and ethanol. ### Claim 10 (depends on 1) The coating composition of claim 1, wherein the boiling point of solvent B under SATP conditions is 100 to 200° C. ### Claim 11 (depends on 10) The coating composition of claim 10, wherein solvent B is selected from the group consisting of: 1-hexanol; cyclohexanol; tetrahydrofurfuryl alcohol; 1-methoxy-2-propyl acetate; and ethyl lactate. ### Claim 12 (depends on 1) The coating composition of claim 1, wherein the fraction of solvent A is 75 to 99 vol % and the fraction of solvent B is 1 to 25 wt %, based on the total volume of solvents present. ### Claim 13 (depends on 1) The coating composition of claim 1, wherein, in addition to A and B, said composition comprises one or more additional solvents. ### Claim 14 (depends on 1) A composition comprising a layer of the coating composition of claim 1, wherein said coating composition coats a layer of semiconductor. ### Claim 15 (depends on 14) The composition of claim 14, wherein said layer of semiconductor comprises indium oxide. ### Claim 16 A method for producing a coating composition comprising, mixing at least one yttrium-containing precursor, a solvent A, and a solvent B, which is different from the solvent A, wherein the ratio of the vapour pressure of solvent A at 20° C. to the vapour pressure of solvent B at 20° C. is p A p B ≥ 10 and wherein: a) the at least one yttrium-containing precursor comprises a yttrium oxoalkoxide; b) the coating composition does not comprise water as a solvent; and c) the only metal or semimetal present in precursors is yttrium. ### Claim 17 (depends on 16) The method of claim 16, wherein further solvents or additives are mixed with said at least one yttrium-containing precursor, a solvent A, and a solvent B. ### Claim 18 (depends on 16) The method of claim 16, wherein the at least one yttrium-containing precursor is further comprises one or more compounds selected from the group consisting of: yttrium alkoxides; yttrium alkoxyalkoxides; and yttrium salts. ### Claim 19 (depends on 16) The method of claim 16, wherein the water content in the coating composition (including water absorbed from the atmosphere) is not more than 500 ppm and the coating composition is free of additives. ### Claim 20 (depends on 16) The method of claim 16, wherein the at least one yttrium-containing precursor is Y5O(O-tPr)13.