# US 10,308,758 B2 · Filling material for three-dimensional mounting of semiconductor element

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- Number: US 10,308,758 B2
- Document ID: US10308758B2
- Status: Granted
- Kind: B2
- Application number: 15/024,910
- Filed: 2014-09-25
- Published: 2016-08-18
- Granted: 2019-06-04
- Earliest claimed: 2013-09-27
- Assignees: Daicel Corporation
- Applicants: Daicel Corporation
- Inventors: Hiroki Tanaka; Katsuhiro Nakaguchi
- Web page: https://patentgrep.com/patent/US10308758B2

## CPC

- C08G 59/245: {aromatic}
- C08G 59/226: {Mixtures of di-epoxy compounds}
- C08G 59/24: carbocyclic
- C08G 59/4064: {sulfur containing compounds (C08G59/4021, C08G59/4028 take precedence)}
- C08G 59/687: {containing sulfur}
- C08K 3/36: Silica
- C08K 5/5425: containing at least one C=C bond
- C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 72/0198: {batch processes}
- H10W 74/014: {using batch processing}
- H10W 74/016: {using moulds}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 74/473: {containing a filler}
- H10W 90/00: Package configurations
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 72/073: {of die-attach connectors}
- H10W 72/823: {Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip}
- H10W 72/874: {On different surfaces}
- H10W 72/9413: {on encapsulations}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body}
- H10W 74/47: comprising organic materials, e.g. plastics or resins
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/732: {between stacked chips}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)
- C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are a filling component useful for the production of a thin, low-profile three-dimensional integrated semiconductor device via a COW process, and a curable composition for the formation of the filling component. The filling component according to the present invention for three-dimensional mounting of semiconductor elements is used to fill gaps between laterally adjacent semiconductor elements in the production of a three-dimensional integrated semiconductor device by stacking and integrating semiconductor elements. The filling component is a component that is polished and/or ground flat from the front side of semiconductor elements while gaps between the semiconductor elements are filled with the filling component.

## Claims

### Claim 1

A curable composition for three-dimensional mounting of semiconductor elements,
the curable composition comprising:
an epoxide having a bisphenol skeleton represented by formula (1), (2) or (3)
wherein r represents a number of 0 to 8;
a cycloaliphatic epoxide represented by formula (4),
wherein Y1 is selected from a single bond and a linkage group, and the linkage group is selected from the group consisting of divalent hydrocarbon group, carbonyl group (—CO—), ether bond (—O—), ester bond (—COO—), amide bond (—CONH—), carbonate bond (—OCOO—) and combinations thereof; and
a cationic-polymerization initiator,
wherein a ratio in parts by weight of the epoxide having a bisphenol skeleton represented by formula (1), (2), or (3) to the cycloaliphatic epoxide represented by formula (4) in the curable composition is 55:45 to 99:1,
wherein the curable composition does not contain a radical polymerization initiator,
wherein the curable composition is a liquid at 25° C., and
wherein the curable composition is suitable for use in the formation of a filling component.

### Claim 2 (depends on 1)

The curable composition according to claim 1 for three-dimensional mounting of semiconductor elements, the curable composition further comprising
at least one filler selected from the group consisting of inorganic fillers and organic fillers each having an average particle diameter of 0.05 to 1 μm.

### Claim 3 (depends on 2)

The curable composition according to claim 2 for three-dimensional mounting of semiconductor elements, the curable composition further comprising
a silane coupling agent.

### Claim 4 (depends on 1)

The curable composition according to claim 1 for three-dimensional mounting of semiconductor elements, the curable composition further comprising
a silane coupling agent.