# US 10,308,522 B2 · High Q modified barium magnesium tantalate for high frequency applications

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,308,522 B2
- Document ID: US10308522B2
- Status: Granted
- Kind: B2
- Application number: 15/608,170
- Filed: 2017-05-30
- Published: 2017-11-30
- Granted: 2019-06-04
- Earliest claimed: 2016-05-31
- Assignees: Skyworks Solutions, Inc.
- Applicants: Skyworks Solutions, Inc.
- Inventors: Michael David Hill
- Web page: https://patentgrep.com/patent/US10308522B2

## CPC

- C01G 35/006: {Compounds containing tantalum, with or without oxygen or hydrogen, and containing two or more other elements}
- C01G 41/006: {Compounds containing tungsten, with or without oxygen or hydrogen, and containing two or more other elements}
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- H01B 3/12: ceramics
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3255: Niobates or tantalates, e.g. silver niobate
- C04B 2235/326: Tungstates, e.g. scheelite
- C04B 2235/768: Perovskite structure ABO3
- C04B 2235/77: Density
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

## Claims

### Claim 1

A dielectric resonator or isolator for applications above 10 GHz, the dielectric resonator comprising:
barium magnesium tantalate; and
one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 incorporated into the barium magnesium tantalate to form a composite material having a high Q value of greater than 12000 at 10 GHz.

### Claim 2 (depends on 1)

The dielectric resonator or isolator of claim 1 wherein the dielectric resonator is configured to be used at frequencies of about 10 GHz and above.

### Claim 3

A high Q ceramic material comprising:
barium magnesium tantalate;
about 5 wt. % of a hexagonal perovskite crystal structure; and
MgTa2O6, the hexagonal perovskite crystal structure and MgTa2O6 incorporated into the barium magnesium tantalate to form a composite material having a high Q value of greater than 12000 at about 10 GHz.

### Claim 4 (depends on 3)

The high Q ceramic material of claim 3 wherein the high Q ceramic material does not include tin.

### Claim 5 (depends on 3)

A cellular base station including the high Q ceramic material of claim 3.

### Claim 6 (depends on 3)

A millimeter wave filter including the high Q ceramic material of claim claim 3.

### Claim 7 (depends on 3)

A collision avoidance system including the high Q ceramic material of claim 3.

### Claim 8 (depends on 1)

The dielectric resonator or isolator of claim 1 wherein the dielectric resonator or isolator does not include tin.

### Claim 9 (depends on 1)

A cellular base station including the dielectric resonator or isolator of claim 1.

### Claim 10 (depends on 1)

A millimeter wave filter including the dielectric resonator or isolator of claim 1.

### Claim 11 (depends on 1)

A collision avoidance system including the dielectric resonator or isolator of claim 1.

### Claim 12

A high Q ceramic material comprising:
barium magnesium tantalate; and
one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 incorporated into the barium magnesium tantalate to form a composite material having a high Q value of greater than 12000 at 10 GHz.

### Claim 13 (depends on 12)

The high Q ceramic material of claim 12 wherein the high Q ceramic material does not include tin.

### Claim 14 (depends on 12)

The high Q ceramic material of claim 12 wherein the composite material contains at least 95% barium magnesium tantalate.

### Claim 15 (depends on 12)

The high Q ceramic material of claim 12 wherein the composite material contains at least 97% barium magnesium tantalate.

### Claim 16 (depends on 12)

The high Q ceramic material of claim 12 wherein the composite material has a dielectric constant of at least 25.

### Claim 17 (depends on 12)

The high Q ceramic material of claim 12 wherein the composite material has a Q value of greater than 17000 at about 10 GHz.

### Claim 18 (depends on 12)

A cellular base station including the high Q ceramic material of claim 12.

### Claim 19 (depends on 12)

A millimeter wave filter including the high Q ceramic material of claim claim 12.

### Claim 20 (depends on 12)

A collision avoidance system including the high Q ceramic material of claim 12.
