# US 10,308,503 B2 · Dual cavity pressure structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,308,503 B2 - Document ID: US10308503B2 - Status: Granted - Kind: B2 - Application number: 15/636,463 - Filed: 2017-06-28 - Published: 2017-10-19 - Granted: 2019-06-04 - Earliest claimed: 2015-03-17 - Assignees: InvenSense, Inc. - Applicants: InvenSense, Inc. - Inventors: Jong Il Shin; Peter Smeys; Daesung Lee - Web page: https://patentgrep.com/patent/US10308503B2 ## CPC - B81B 7/02: containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) - B81C 1/00214: {Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices} - B81C 1/00293: {maintaining a controlled atmosphere with processes not provided for in B81C1/00285} - G01P 15/0802: {Details} - B81B 2201/0235: Accelerometers - B81B 2201/0242: Gyroscopes - B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package - B81C 2203/0118: Bonding a wafer on the substrate, i.e. where the cap consists of another wafer - B81C 2203/035: Soldering - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - G01P: MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT (measuring or recording blood flow A61B5/02, A61B8/06; monitoring speed or deceleration of electrically-propelled vehicles B60L3/00; vehicle lighting systems adapted to indicate speed B60Q1/54; determining position or course in navigation, measuring ground distance in geodesy or surveying G01C; combined measuring devices for measuring two or more variables of movement G01C23/00; measuring velocity of sound G01H; measuring velocity of light G01J7/00; measuring direction or velocity of solid objects by reception or emission of radiowaves or other waves and based on propagation effects, e.g. Doppler effect, propagation time, direction of propagation, G01S; measuring speed of nuclear radiation G01T; measuring acceleration of gravity G01V; {measuring or recording the speed of trains B61L23/00; speed indicators incorporated in motor vehicles B60K35/00; measuring frequency or phase G01R; traffic control G08G}) ## Abstract An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench. ## Claims ### Claim 1 An apparatus comprising: a cavity within a substrate; a MEMS structure surrounded by the cavity; a trench connected to the cavity, wherein the trench is not directly opposite the MEMS structure; an oxide layer lining the trench and the cavity; and a seal layer, wherein the seal layer seals the trench and traps a predetermined pressure within the cavity and the trench. ### Claim 2 (depends on 1) The apparatus of claim 1, further comprising: an additional cavity including an additional predetermined pressure, wherein the additional predetermined pressure is different from the predetermined pressure; and an additional MEMS structure surrounded by the additional cavity. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the additional cavity does not include an additional trench. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the substrate is a handle substrate; and further comprising: a structural layer including the MEMS structure; and a fusion bond connecting the handle substrate to the structural layer. ### Claim 5 (depends on 4) The apparatus of claim 4, wherein the structural layer is eutecticly bonded to an additional substrate. ### Claim 6 (depends on 5) The apparatus of claim 5, wherein the additional substrate has CMOS (complementary metal-oxide semiconductor) electrical circuits. ### Claim 7 An apparatus comprising: a trench in a first side of a first silicon wafer; a cavity connected to the trench in the first side of the first silicon wafer; an oxide layer on the first side and in the trench; a second silicon wafer bonded to the first side of the first silicon wafer; a MEMS (micro-electro-mechanical systems) structure in the second silicon wafer; a third silicon wafer bonded to the second silicon wafer, a layer on a second side of the first silicon wafer, wherein the trench is exposed in a portion of the second side of the first silicon wafer, the layer seals the trench, the cavity, and the MEMS structure, and the layer seals a pressure in the cavity. ### Claim 8 (depends on 7) The apparatus of claim 7, wherein the second silicon wafer is eutecticly bonded to the third silicon wafer. ### Claim 9 (depends on 7) The apparatus of claim 7, further comprising an additional cavity in the first side of the first silicon wafer. ### Claim 10 (depends on 9) The apparatus of claim 9, wherein the additional cavity in the first side of the first silicon wafer includes a different pressure from the pressure within the cavity. ### Claim 11 (depends on 7) The apparatus of claim 7, further comprising an additional MEMS structure in the second silicon wafer. ### Claim 12 (depends on 7) The apparatus of claim 7, wherein the second silicon wafer bonded to the third silicon wafer provides a hermetic seal and an electrical connection. ### Claim 13 (depends on 7) The apparatus of claim 7, wherein the second silicon wafer bonded to the third silicon wafer includes an aluminum-germanium bond. ### Claim 14 (depends on 7) The apparatus of claim 7, wherein the oxide layer reduces a width of the trench.