# US 10,307,885 B2 · Method for raising polishing pad and polishing method

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- Number: US 10,307,885 B2
- Document ID: US10307885B2
- Status: Granted
- Kind: B2
- Application number: 15/541,562
- Filed: 2016-01-05
- Published: 2017-11-30
- Granted: 2019-06-04
- Earliest claimed: 2015-02-04
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Applicants: Shin-Etsu Handotai Co., Ltd.
- Inventors: Takuya Sasaki; Yuki Tanaka
- Web page: https://patentgrep.com/patent/US10307885B2

## CPC

- B24B 53/017: Devices or means for dressing, cleaning or otherwise conditioning lapping tools
- B24B 37/00: Lapping machines or devices; Accessories (B24B3/00 takes precedence)
- B24B 37/08: for double side lapping
- B24B 37/24: characterised by the composition or properties of the pad materials
- B24B 49/18: taking regard of the presence of dressing tools
- G01N 23/223: by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 52/402: {of semiconductor materials}
- H10P 70/20: {Cleaning during device manufacture}
- H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring}
- G01N 2223/6116: semiconductor wafer
- G01N 2223/652: impurities, foreign matter, trace amounts
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for raising a polishing pad for polishing a silicon wafer, wherein a polishing pad made of foamed urethane resin is attached to a polishing machine, after dressing is performed, dummy polishing is performed, after processing to remove the polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues. As a result, a method for raising a polishing pad can improve the particle level in the polishing pad life early stage.

## Claims

### Claim 1

A method for raising a polishing pad for polishing a silicon wafer, wherein
a polishing pad made of foamed urethane resin is attached to a polishing machine,
after dressing is performed, dummy polishing is performed,
after processing to remove polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and
a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues, and wherein
the judgment is made as follows:
by performing polishing of a silicon wafer by using a reference polishing pad made of foamed urethane resin separately subjected only to dressing, processing to remove polishing residues which is performed by the same means as that used in the removal processing after the dummy polishing, and measurement of an amount of polishing residues after the removal processing, the amount of polishing residues in the reference polishing pad at a point in time at which a value of, i.e., an amount of time the reference polishing pad was used÷a previously set life of the reference polishing pad, is 0.05 is determined as a reference value in advance, and,
if the amount of polishing residues measured after the dummy polishing and the removal processing is greater than or equal to the reference value, a judgment is made that the polishing pad subjected to the dummy polishing has risen.

### Claim 2 (depends on 1)

The method for raising a polishing pad according to claim 1, wherein
the amount of polishing residues is measured by detecting a signal containing a Si—Kα ray from a fluorescent X-ray spectrum which is obtained by a fluorescent X-ray analysis method.

### Claim 3 (depends on 2)

The method for raising a polishing pad according to claim 2, wherein
the processing to remove polishing residues is performed by dressing and high-pressure jet water cleaning.

### Claim 4 (depends on 1)

The method for raising a polishing pad according to claim 1, wherein
the processing to remove polishing residues is performed by dressing and high-pressure jet water cleaning.

### Claim 5 (depends on 1)

The method for raising a polishing pad according to claim 1, wherein
the polishing machine is a double-side polishing machine.

### Claim 6

A method for polishing a silicon wafer by using a polishing pad, wherein
a polishing pad made of foamed urethane resin is attached to a polishing machine,
after dressing is performed, dummy polishing is performed,
after processing to remove polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured,
a polishing pad that is used in polishing of the silicon wafer is selected based on the measured amount of polishing residues, and
polishing of the silicon wafer is performed by using the selected polishing pad, and wherein
the selection is made as follows:
by performing polishing of a silicon wafer by using a reference polishing pad made of foamed urethane resin separately subjected only to dressing, processing to remove polishing residues which is performed by the same means as that used in the removal processing after the dummy polishing, and measurement of an amount of polishing residues after the removal processing, the amount of polishing residues in the reference polishing pad at a point in time at which a value of, i.e., an amount of time the reference polishing pad was used÷a previously set life of the reference polishing pad, is 0.05 is determined as a reference value in advance, and
a polishing pad whose amount of polishing residues measured after the dummy polishing and the removal processing is greater than or equal to the reference value is selected as a polishing pad that is used in polishing of the silicon wafer.

### Claim 7 (depends on 6)

The polishing method according to claim 6, wherein
the amount of polishing residues is measured by detecting a signal containing a Si—Kα ray from a fluorescent X-ray spectrum which is obtained by a fluorescent X-ray analysis method.

### Claim 8 (depends on 7)

The polishing method according to claim 7, wherein
the processing to remove polishing residues is performed by dressing and high-pressure jet water cleaning.

### Claim 9 (depends on 6)

The polishing method according to claim 6, wherein
the processing to remove polishing residues is performed by dressing and high-pressure jet water cleaning.

### Claim 10 (depends on 6)

The polishing method according to claim 6, wherein
the polishing machine is a double-side polishing machine.