# US 10,307,763 B2 · Polycrystalline silicon fragment, method for manufacturing polycrystalline silicon fragment, and polycrystalline silicon block fracture device

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- Number: US 10,307,763 B2
- Document ID: US10307763B2
- Status: Granted
- Kind: B2
- Application number: 15/518,637
- Filed: 2015-10-09
- Published: 2017-08-24
- Granted: 2019-06-04
- Earliest claimed: 2014-10-14
- Assignees: Tokuyama Corporation
- Applicants: Tokuyama Corporation
- Inventors: Kazuhiro Kawaguchi; Masami Fujii; Sho Uchida; Manabu Kondo; Yoshifumi Mito; Nobuaki Yoshimatsu
- Web page: https://patentgrep.com/patent/US10307763B2

## CPC

- B02C 1/04: with single-acting jaws
- B02C 23/10: with separator arranged in discharge path of crushing or disintegrating zone
- B02C 23/30: the applied gas acting to effect material separation (B02C23/34 takes precedence)
- C01B 33/02: Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B)
- C30B 15/02: adding crystallising materials or reactants forming it in situ to the melt
- C01P 2004/60: Particles characterised by their size
- C01P 2006/80: Compositional purity
- B02C: CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN ({household tools and machines for pulverising foodstuffs, e.g. coffee and spice mills A47J42/00; pharmaceutical mortars A61J3/02; mechanical processing of refuse and garbage B03B9/06; dressing mould materials by grinding B22C5/04}; obtaining metallic powder by crushing, grinding or milling B22F9/04; {recovery of plastics by disintegrating B29B17/00; crushing raw materials in starch making C08B30/02; beaters for papermaking D21D1/02; crushing devices specially for transport in mines E21F13/002; slag crushing devices F23J1/00; fuel milling devices in combustion apparatus F23K1/00; household devices for crushing coal F24B15/02; ice disintegrating devices F25C5/02})
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Polycrystalline silicon fragments obtained by fracturing polycrystalline silicon blocks wherein a content ratio of polycrystalline silicon powder having a particle size of 500 to 1000 μm is 0.1 to 40 ppmw.

## Claims

### Claim 1

A polycrystalline silicon fragment obtained by fracturing a polycrystalline silicon block which is not carried out with a wet chemical cleaning using acid, comprising:
i) 90 wt % or more of said polycrystalline silicon fragment has the particle size of 4 to 60 mm;
ii) a content ratio of polycrystalline silicon powder having the particle size of 500 to 1000 μm is 1 to 30 ppmw;
iii) a content ratio of the silicon dust having the particle size of less than 500 μm is 10 to 60 ppmw, and
iv) a metal of a surface contamination including at least one metal selected from the group consisting of Na, Cr, Fe, Ni, Cu, Zn, Co, and W is 3 to 15 ppbw.

### Claim 2

A polycrystalline silicon fragment obtained by fracturing a polycrystalline silicon block which is not carried out with a wet chemical cleaning using acid, comprising:
i) 90 wt % or more of said polycrystalline silicon fragment has the particle size of 2 to 40 mm;
ii) a content ratio of the polycrystalline silicon powder having the particle size of 500 to 1000 μm is 2 to 40 ppmw;
iii) a content ratio of the silicon dust having the particle size of less than 500 μm is 20 to 140 ppmw, and
iv) a metal of a surface contamination including at least one metal selected from the group consisting of Na, Cr, Fe, Ni, Cu, Zn, Co, and W is 15 to 30 ppbw.

### Claim 3

A polycrystalline silicon fragment obtained by fracturing a polycrystalline silicon block which is not carried out with a wet chemical cleaning using acid, comprising:
i) 90 wt % or more of said polycrystalline silicon fragment has the particle size of 20 to 90 mm;
ii) a content ratio of the polycrystalline silicon powder having the particle size of 500 to 1000 μm is 0.5 to 25 ppmw;
iii) a content ratio of the silicon dust having the particle size of less than 500 μm is 5 to 50 ppmw, and
iv) a metal of a surface contamination including at least one metal selected from the group consisting of Na, Cr, Fe, Ni, Cu, Zn, Co, and W is 2 to 8 ppbw.