Mask manufacturing apparatus and, manufacturing method of mask and, mask for lithography
AssigneePostech Academy-Industry Foundation
InventorsJun Suk Rho, In Ki Kim, Heon Yeong Jeong
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Abstract
A mask manufacturing apparatus, a method of manufacturing the mask, and a mask for lithography, capable of providing a pattern having a size in nanometer unit using the photo-lithography process are provided. A mask manufacturing apparatus, a method of manufacturing the mask, and an elastic film for a photo-mask lower a critical dimension of the pattern(s) without increasing a manufacturing cost. The mask manufacturing apparatus and the method of manufacturing the mask, and the mask for lithography provide a pattern having a size in nanometer unit using the photo-lithography process.
Claims20
An apparatus for manufacturing a mask using lithography, comprising:
- an extension part for extending an elastic film in one or more axis directions;
- a coating part for coating a photo-resist on an upper surface of the elastic film extended by the extension part;
- a pattern forming part for forming patterns on the photo-resist upper surface;
- an etching part for etching the elastic film such that the same patterns as patterns formed on the photo-resist are formed on the elastic film;
- a cleaning part for removing the photo-resist remaining on the elastic film;
- and
- a controller for controlling the extension part after the patterns are formed on the elastic film to restore the elastic film from an extended state to an original state,
- wherein the controller controls an extension ratio of the elastic film to reduce the sizes of the patterns of the elastic film restored to the original state according to the extension ratio.
A method of manufacturing a mask using a lithography process, comprising:
- extending an elastic film by an extension part according to an extension ratio controlled by a controller;
- coating a photo-resist on an upper surface of the elastic film by a coating part in a state where the elastic film is extended by the extension part;
- forming patterns on an upper surface of the photo-resist by a pattern forming part;
- etching the elastic film by etching part such that the same patterns as patterns formed on the photo-resist are formed on the elastic film;
- removing the photo-resist remaining on the elastic film by a cleaning part;
- and
- restoring the elastic film patterned in an extended state from the extended state to an original state to reduce the sizes of the patterns of the elastic film restored to the original state according to the extension ratio.
Dependencies are inferred from the claim text.