Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
AssigneeHoya Corporation
InventorsToshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
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Abstract
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Claims26
A method of manufacturing a mask blank substrate for use in lithography, the method comprising:
- performing a surface treatment so that the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1 and not more than 10 μm−1;
- performing defect inspection of the main surface of the mask blank substrate with inspection light in the wavelength range of 150 nm to 365 nm.
A method of manufacturing a mask blank substrate for use in lithography, the method comprising:
- performing a surface treatment so that the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 5 nm4 at a spatial frequency of not less than 10 μm−1 and not more than 100 μm−1;
- performing defect inspection of the main surface of the mask blank substrate with inspection light in the wavelength range of 0.2 nm to 100 nm.
A method of manufacturing a substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on a surface of a mask blank substrate for use in lithography, optionally the substrate with a multilayer reflective film having a protective layer on the multilayer reflective film, the method comprising:
- forming the multilayer reflective film, and optionally forming the protective layer on the multilayer reflective film, so that the surface of the substrate with a multilayer reflective film has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 17 nm4 at a spatial frequency of not less than 1 μm−1 and not more than 10 μm−1;
- performing defect inspection of the main surface of the mask blank substrate with inspection light in the wavelength range of 150 nm to 365 nm.
A method of manufacturing a substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on a surface of a mask blank substrate for use in lithography, optionally the substrate with a multilayer reflective film having a protective layer on the multilayer reflective film, the method comprising:
- forming the multilayer reflective film, and optionally forming the protective layer on the multilayer reflective film, so that the surface of the substrate with a multilayer reflective film has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 9 nm4 at a spatial frequency of not less than 10 μm−1 and not more than 100 μm−1
- performing defect inspection of the main surface of the mask blank substrate with inspection light in the wavelength range of 0.2 nm to 100 nm.
A method of manufacturing a transmissive mask blank comprising a light shielding function film to be a transfer pattern on the main surface of a mask blank substrate, the method comprising:
- forming the light shielding function film so that a surface of the light shielding function film, obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1 and not more than 10 μm−1;
- performing defect inspection of the main surface of the mask blank substrate with inspection light in the wavelength range of 150 nm to 365 nm.
Dependencies are inferred from the claim text.