Producing method and apparatus of silicon single crystal, and silicon single crystal ingot

A producing method of a silicon single crystal, in which a dopant is supplied to a melt kept in a crucible within a furnace;

• and the silicon single crystal having the dopant added thereto is pulled up from the melt to grow the silicon single crystal, wherein a production apparatus of the method comprises:
• a dopant supply unit comprising an accommodation chamber which accommodates a sublimable dopant, and a supplying tube which, when the dopant in the accommodation chamber is sublimed, blows the sublimed dopant to the melt to lead the sublimed dopant to the melt, and in which a distance between an opening edge and the melt is 10 mm or less,
• the method comprising:
• adding no dopant to the melt until at least 100 mm of a straight body portion of the silicon single crystal is formed, and
• after at least 100 mm of the straight body portion of the silicon single crystal is formed, adding the dopant to the melt in a desired concentration by activating the dopant supply unit to sublime the dopant at a desired sublimation speed, and then supplying the sublimed dopant from the opening edge of the supplying tube to the melt.