Plating method
AssigneeEbara Corporation
InventorsShingo Yasuda, Akira Owatari
Life of this patent
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Abstract
A method of plating a substrate, such as a wafer, by applying a voltage between the substrate and an anode is disclosed. The plating method includes: preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied.
Claims5
A method for plating a substrate while preventing a generation of an electrolyte component which inhibits bottom-up plating of the substrate, comprising:
- preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess;
- providing a diode whose allowable value of a reverse electric current has been selected based on a predetermined allowable depth of a dimple that can be formed in the conductive layer of the substrate to be plated;
- placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive;
- applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate;
- and
- disposing the diode between the insoluble anode and the substrate to reduce a reverse electric current that flows from the insoluble anode to the substrate via the plating power source when the predetermined plating voltage is not applied.
Dependencies are inferred from the claim text.