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US 10,294,561 B2Granted
Growth of metal on a dielectric
AssigneeInternational Business Machines Corporation
InventorsGuohan Hu, Daniel C. Worledge
Life of this patent
Estimating the term…
Abstract
A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.
Claims20
A method comprising:
- forming a first metal layer on a seed layer, wherein the first metal layer wets the seed layer;
- and
- annealing to diffuse a reactant element of the seed layer into the first metal layer to convert the first metal layer to a dielectric layer.
A method comprising:
- forming a second metal layer on a first metal layer, wherein the second metal layer wets the first metal layer;
- reacting the second metal layer with a reactant element;
- and
- annealing to diffuse the reactant element of the second metal layer into at least the first metal layer to convert the first metal layer to a first dielectric layer.
1 more element
Dependencies are inferred from the claim text.