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US 10,294,399 B2Granted
Composition and method for polishing silicon carbide
AssigneeCabot Microelectronics Corporation
InventorsRoman Ivanov, Fernando Hung Low, Cheng-Yuan Ko, Glenn Whitener
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Abstract
The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
Claims8
A method of chemically mechanically polishing a substrate comprising:
- (i) providing a substrate, wherein the substrate comprises a silicon carbide layer on a surface of the substrate;
- (ii) providing a polishing pad;
- (iii) providing a polishing composition comprising:
- (a) silica particles,
- (b) a polymer comprising sulfonic acid monomeric units selected from polystyrenesulfonic acid, poly(2-acrylamido-2-methyl-1-propanesulfonic acid), and poly(styrenesulfonic acid-co-maleic acid), and has an average molecular weight of about 75,000 g/mole to about 200,000 g/mole, and
- (c) water,
- wherein the polishing composition has a pH of about 2 to about 5;
- (iv) contacting the substrate with the polishing pad and the polishing composition;
- and
- (v) moving the polishing pad and the polishing composition relative to the substrate to abrade at least a portion of the silicon carbide layer on a surface of the substrate to polish the substrate.
7 more elements
Dependencies are inferred from the claim text.