Semiconductor arrangement with one or more semiconductor columns

A method of forming a semiconductor arrangement, comprising:

• forming a first set of mask structures over a substrate, wherein the first set of mask structures extend in a first direction and are made of a first mask material;
• forming a second set of mask structures over the substrate, wherein the second set of mask structures extend in the first direction and are made of a second mask material;
• forming a third set of mask structures over the first set of mask structures and over the second set of mask structures, wherein the third set of mask structures extend in a second direction and are made of a mask material different than the second mask material;
• removing first portions of the second set of mask structures that are not concealed by at least one mask structure of the third set of mask structures, wherein second portions of the second set of mask structures that are concealed by at least one mask structure of the third set of mask structures remain after the removing first portions of the second set of mask structures;
• removing all of the third set of mask structures and all of the first set of mask structures after the removing first portions of the second set of mask structures;
• and
• etching the substrate to define semiconductor columns underlying the second portions of the second set of mask structures.

A method of forming a semiconductor arrangement, comprising:

• using a lithography tool having a resolution limit and forming a first mask structure and a second mask structure over a substrate, wherein the first mask structure and the second mask structure extend in a first direction and are separated by a first pitch greater than or equal to the resolution limit;
• forming a third mask structure and a fourth mask structure over the substrate after the forming a first mask structure and a second mask structure, wherein:
• the third mask structure and the fourth mask structure are formed between the first mask structure and the second mask structure
• the third mask structure and the fourth mask structure extend in the first direction,
• the third mask structure interfaces with the first mask structure, and
• the fourth mask structure interfaces with the second mask structure;
• forming a fifth mask structure over the substrate after the forming a third mask structure and a fourth mask structure, wherein:
• the fifth mask structure is formed between the third mask structure and the fourth mask structure, and
• the fifth mask structure interfaces with the third mask structure and the fourth mask structure;
• forming a sixth mask structure over the first mask structure, the second mask structure, the third mask structure, the fourth mask structure, and the fifth mask structure, wherein the sixth mask structure extends in a second direction;
• removing a portion of the third mask structure and a portion of the fourth mask structure not concealed by the sixth mask structure;
• and
• using a second portion of the third mask structure and a second portion of the fourth mask structure to form semiconductor columns from the substrate, wherein a pitch between a first semiconductor column of the semiconductor columns and a second semiconductor column of the semiconductor columns is less than the resolution limit of the lithography tool.