Integrated circuit layout structure
AssigneeUnited Microelectronics Corp.
InventorsChien-Hung Chen, Chun-Hsien Wu
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Abstract
An integrated circuit layout structure having dual-height standard cells includes at least a first standard cell including a first cell height and at least a second standard cell including a second cell height. The second cell height is one half of the first cell height. The first standard cell includes one first doped region formed in a middle of the first standard cell and a plurality of second doped regions formed at a top side and a bottom side of the first standard cell. The first doped region includes a first conductivity type and the second doped regions include a second conductivity type complementary to the first conductivity type. And an area of the first doped region is smaller than an area of the total second doped regions.
Claims17
An integrated circuit layout structure having dual-height standard cells, comprising:
- at least a first standard cell having a first cell height, the first standard cell comprising one first doped region formed in a middle of the first standard cell and a plurality of second doped regions formed at a top side and a bottom side of the first standard cell, the first doped region having a first conductivity type, the second doped regions having a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other, wherein a total area of the first doped region in the middle of the first standard cell is smaller than a total area of the second doped regions at the top side of the first standard cell and is smaller than a total area of the second doped regions at the bottom side of the first standard cell;
- and
- at least a second standard cell having a second cell height, the second cell height being one half of the first cell height.
An integrated circuit layout structure having dual-height standard cells, comprising:
- at least a first standard cell having a first cell height, the first standard cell comprising one first doped region and a plurality of second doped regions, the first doped region having a first conductivity type, the second doped regions having a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other, wherein a total area of the first doped region in a middle of the first standard cell is smaller than a total area of the second doped regions at a top side of the first standard cell and is smaller than a total area of the second doped regions at a bottom side of the first standard cell;
- at least a second standard cell having a second cell height, the second cell height being one half of the first cell height;
- and
- a first conductor extending across a middle of the first standard cell.
Dependencies are inferred from the claim text.