Power semiconductor device and method for manufacturing same

A power semiconductor device comprising:

• a semiconductor element including a first power element having a first surface and a second surface opposite to each other;
• a heat dissipation plate including a first conductor plate bonded to the first surface of the first power element;
• a conductor portion including a first interconnection member that is bonded to the second surface of the first power element and that is electrically connected to the first power element;
• a bonding material including a first bonding material for bonding the first surface of the first power element to the first conductor plate, and a second bonding material for bonding the second surface of the first power element to the first interconnection member;
• and
• a sealing material for sealing the semiconductor element, the conductor portion, and the heat dissipation plate, wherein
• the bonding material further includes an intermetallic compound,
• the second bonding material includes
• a first portion interposed between the second surface of the first power element and the first interconnection member, and
• a second portion connected to the first portion through the first interconnection member,
• the conductor portion further includes a second interconnection member,
• the bonding material further includes a third bonding material for bonding the first conductor plate to the second interconnection member,
• the third bonding material includes
• a third portion interposed between the first conductor plate and the second interconnection member, and
• a fourth portion connected to the third portion through the second interconnection member,
• the semiconductor element further includes a second power element having a third surface and a fourth surface opposite to each other,
• the heat dissipation plate further includes a second conductor plate bonded to the fourth surface of the second power element with the second conductor plate being separated from the first conductor plate by a distance,
• the bonding material further includes
• a fourth bonding material for bonding the third surface of the second power element to the second conductor plate, and
• a fifth bonding material for bonding the fourth surface of the second power element to the second interconnection member, and
• the fifth bonding material includes
• a fifth portion interposed between the fourth surface of the second power element and the second interconnection member, and
• a sixth portion connected to the fifth portion through the second interconnection member.