# US 10,281,412 B2 · Apparatus for measuring semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,281,412 B2 - Document ID: US10281412B2 - Status: Granted - Kind: B2 - Application number: 15/203,070 - Filed: 2016-07-06 - Published: 2017-04-13 - Granted: 2019-05-07 - Earliest claimed: 2015-10-08 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Choon-Shik Leem; Yeon-Joong Kim - Web page: https://patentgrep.com/patent/US10281412B2 ## CPC - G01N 23/20025: Sample holders or supports therefor - G01N 23/2251: using incident electron beams, e.g. scanning electron microscopy [SEM] - H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} - G01N 2223/052: reflection - G01N 2223/6116: semiconductor wafer - H01J 2237/20207: Tilt - H01J 2237/20214: Rotation - H01J 2237/20242: Eucentric movement - H01J 2237/226: Image reconstruction - H01J 2237/2611: Stereoscopic measurements and/or imaging - H01J 2237/2817: Pattern inspection - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector. ## Claims ### Claim 1 An apparatus for measuring a semiconductor device, the apparatus comprising: a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate; a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle; a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle; an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector; and an angle adjuster which lies in the horizontal plane and is positioned around a perimeter of a side surface of the stage and is connected to the stage so as to rotate the stage toward the central axis by the first and second angles. ### Claim 2 (depends on 1) The apparatus of claim 1, further comprising a stage driver having a spherical first end inserted into the stage and a second end disposed under the stage in a direction in which the central axis extends. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein the stage driver is configured to rotate the stage toward the central axis by the first and second angles to the horizontal plane. ### Claim 4 (depends on 3) The apparatus of claim 3, wherein the arithmetic operation unit is configured to control the stage driver. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the stage comprises a flat upper surface and a hemispherical lower surface and further comprising a stage driver adjacent a lower surface of the stage and that is configured to rotate the stage toward the central axis by the first and second angles to the horizontal plane. ### Claim 6 (depends on 5) The apparatus of claim 5, wherein the stage driver is configured to rotate the stage about the central axis on the horizontal plane. ### Claim 7 (depends on 1) The apparatus of claim 1, further comprising a diffraction adjuster which lies in the same plane with the angle adjuster and is positioned around a perimeter of a side surface of the angle adjuster and is connected to the angle adjuster so as to rotate the stage about the central axis on the horizontal plane. ### Claim 8 (depends on 1) The apparatus of claim 1, wherein the second and third beams comprise electrons, and the detector comprises an electrode which induces the electrons toward the detector. ### Claim 9 An apparatus for measuring a semiconductor device, the apparatus comprising: a beam irradiating unit; and a measuring unit configured to measure a structure of a semiconductor pattern placed on a stage using first and second beams irradiated from the beam irradiating unit, wherein the measuring unit rotates the stage toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the stage, by a first angle to the horizontal plane, obtains a first measured value of the semiconductor pattern by irradiating the first beam to the semiconductor pattern, rotates the stage toward the central axis by a second angle different from the first angle to the horizontal plane, and obtains a second measured value of the semiconductor pattern by irradiating the second beam to the semiconductor pattern, wherein the stage is configured to rotate on the same plane with the stage rotated by the first angle to the horizontal plane and is rotated on the same plane with the stage rotated by the second angle to the horizontal plane, and the measuring unit comprising an arithmetic operation unit configured to obtain a plurality of first calculated values using the first angle and a plurality of first measured values obtained by rotating the stage on the same plane with the stage at the first angle, to obtain a first mean value using the first calculated values, to obtain a plurality of second calculated values using the second angle and a plurality of second measured values obtained by rotating the stage on the same plane with the stage at the second angle, to obtain a second mean value using the second calculated values, and to calculate an actual value using the first mean value and the second mean value. ### Claim 10 (depends on 9) The apparatus of claim 9, wherein the measuring unit comprises a detector configured to detect the first and second beams reflected by the semiconductor pattern to obtain each first measured value of the plurality of first measured values and each second measured value of the plurality of second measured values. ### Claim 11 (depends on 9) The apparatus of claim 9, wherein the arithmetic operation unit obtains 2D images of the semiconductor pattern by combining a plurality of actual values and obtains a 3D image of the semiconductor pattern by combining the 2D images. ### Claim 12 An apparatus for measuring a semiconductor device, the apparatus comprising: a beam irradiating unit configured to irradiate a beam to a semiconductor substrate that is reflected as a reflected beam from the semiconductor substrate; a stage configured to receive the semiconductor substrate thereon and configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate; a detector configured to detect the reflected beam from the semiconductor substrate; and an arithmetic operation unit configured to control a rotation of the stage such that two or more reflected beams are detected by the detector at two or more respective different angles, wherein the arithmetic operation unit is configured to generate two or more calculated values corresponding to the two or more reflected beams using the two or more respective different angles, and to generate an actual value using a mean value of the two or more calculated values. ### Claim 13 (depends on 12) The apparatus of claim 12, wherein the arithmetic operation unit is configured to generate a 3D image of the semiconductor substrate using the two or more reflected beams detected by the detector. ### Claim 14 (depends on 12) The apparatus of claim 12, wherein the arithmetic operation unit obtains 2D images of the semiconductor substrate by combining a plurality of actual values and obtains a 3D image of the semiconductor substrate by combining the 2D images. ### Claim 15 (depends on 12) The apparatus of claim 12, wherein the irradiated beam and the two or more reflected beams comprise electrons, and the detector comprises an electrode which induces the electrons toward the detector.