Back to results
US 10,276,909 B2Granted
Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
AssigneeInvensas Bonding Technologies, Inc.
InventorsShaowu Huang, Javier A. DeLaCruz, Belgacem Haba
Life of this patent
Estimating the term…
Abstract
A structure can include a first element and a carrier bonded to the first element along an interface. A waveguide can be defined at least in part along the interface between the first element and the carrier. The waveguide can comprise an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel, as viewed from a side cross-section of the structure. Various millimeter-wave or sub-terahertz components or circuit structures can also be created based on the waveguide structures disclosed herein.
Claims23
A structure comprising:
- a first element;
- a carrier bonded to the first element along an interface;
- and
- a waveguide defined at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure,
- wherein first metallic features are defined in the first element and second metallic features are defined in the carrier, the first and second metallic features being bonded to one another to define the effectively closed metallic channel, and
- wherein first dielectric features are defined in the first element and second dielectric features are defined in the carrier, the first and second dielectric features cooperate to define the dielectric material.
3 more elements
A structure comprising:
- a semiconductor element having a waveguide at least partially embedded therein, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure;
- a first port extending through the effectively closed metallic channel to an exterior surface of the semiconductor element, the first port configured to couple to a radiating element to transmit electromagnetic radiation to, or to receive electromagnetic radiation from, the waveguide, wherein the first port comprises a first metallic boundary and a dielectric feature disposed within the first metallic boundary;
- and
- a first element bonded to the semiconductor element, the first element having a second port having a second metallic boundary, the first and second metallic boundaries aligned with and bonded to one another.
1 more element
A method of forming a structure, the method comprising:
- providing a first element and a carrier, wherein the first element comprises first metallic features and first dielectric features exposed on an exterior surface of the first element and the carrier comprises second metallic features and second dielectric features exposed on an exterior surface of the carrier;
- bonding the first element to the carrier along an interface to bond the first metallic features and the second metallic features and to bond the first dielectric features and the second dielectric features, the bonded first element and carrier defining a waveguide at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure.
A structure comprising:
- a first element;
- a carrier directly bonded to the first element along an interface without an intervening adhesive;
- and
- a waveguide defined at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure,
- wherein first metallic features are defined in the first element and second metallic features are defined in the carrier, the first and second metallic features being bonded to one another to define the effectively closed metallic channel, and
- wherein first dielectric features are defined in the first element and second dielectric features are defined in the carrier, the first and second dielectric features being bonded to one another to define the dielectric material.
3 more elements
Dependencies are inferred from the claim text.