Energy-filtered cold electron devices and methods
AssigneeBoard of Regents, The University of Texas System
InventorsSeong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
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Abstract
Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.
Claims15
An energy-filtered cold electron device comprising:
- a first electrode;
- a first tunneling barrier disposed adjacent to the first electrode;
- a second tunneling barrier disposed adjacent to the first tunneling barrier;
- a semiconductor or metal layer disposed adjacent to the second tunneling barrier;
- an additional second tunneling barrier disposed adjacent to the semiconductor or metal layer;
- an additional first tunneling barrier disposed adjacent to the additional second tunneling barrier;
- and
- a second electrode disposed adjacent to the additional first tunneling barrier;
- wherein the first electrode, the first tunneling barrier, the second tunneling barrier, the semiconductor or metal layer, the additional second tunneling barrier, the additional first tunneling barrier, and the second electrode form an electron tunneling path;
- wherein quantum wells or quantum dots are formed in the first tunneling barrier and/or the additional first tunneling barrier;
- and
- wherein discrete energy levels are formed in the quantum wells or quantum dots.
Dependencies are inferred from the claim text.