Semiconductor device structure with a conductive feature passing through a passivation layer

A semiconductor device structure, comprising:

• a first semiconductor die;
• a second semiconductor die bonded on the first semiconductor die;
• a through-substrate via penetrating through a semiconductor substrate of the second semiconductor die;
• a passivation layer between the first semiconductor die and the second semiconductor die, wherein the passivation layer is directly bonded to the semiconductor substrate of the second semiconductor die;
• a conductive feature passing through the passivation layer, wherein the conductive feature is bonded to the through-substrate via;
• and
• a barrier layer between the conductive feature and the passivation layer, wherein the barrier layer covers sidewalls of the conductive feature and separates a surface of the conductive feature from at least one of a nearest neighboring surface of the semiconductor substrate of the second semiconductor die and a nearest neighboring surface of the through-substrate via, and wherein the barrier layer directly contacts at least one of the semiconductor substrate of the second semiconductor die and the through-substrate via.

A semiconductor device structure, comprising:

• a first semiconductor die having a first interlayer dielectric layer, a first conductive line in the first interlayer dielectric layer, and a first barrier layer between the first interlayer dielectric layer and the first conductive line;
• a second semiconductor die stacked on the first semiconductor die having a second interlayer dielectric layer, a second conductive line in the second interlayer dielectric layer, and a second barrier layer between the second interlayer dielectric layer and the second conductive line;
• a passivation layer between the first semiconductor die and the second semiconductor die, wherein the passivation layer is directly bonded to at least one of the first interlayer dielectric layer and the second interlayer dielectric layer;
• a conductive feature passing through the passivation layer, wherein the conductive feature is bonded to the first conductive line;
• and
• a third barrier layer between the conductive feature and the passivation layer, wherein the third barrier layer covers sidewalls of the conductive feature and is in direct contact with one of the first conductive line and the second conductive line;
• wherein the third barrier layer covers a surface of the conductive feature not directly bonded to one of the first conductive line and the second conductive line, the third barrier layer separating the surface of the conductive feature from a nearest neighboring surface of the first semiconductor die or the second semiconductor die.